A 500V, 6.25MHz GaN-IC With Gate Driver and Level Shifter for Off-Line Power Supplies

Niklas Deneke; Bernhard Wicht

doi:10.1109/lssc.2024.3411390

A 500V, 6.25MHz GaN-IC With Gate Driver and Level Shifter for Off-Line Power Supplies

Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review

Abstract

Gallium Nitride (GaN) technology enables essential progress in energy efficiency and density, especially in off-line power supplies. This letter presents a monolithic GaN-IC, including a half-bridge, formed by two high-voltage power FETs with respective gate drivers and a high-voltage level shifter, forming a signal interface between high-side and low-side domain, making use of a GaN-on-SOI technology. Verified by experimental results, it achieves 500-V switching at 6.25 MHz and is thus well suited for off-line power supplies.

Originalsprache	Englisch
Seiten (von - bis)	207-210
Seitenumfang	4
Fachzeitschrift	IEEE Solid-State Circuits Letters
Jahrgang	7
Elektronisch veröffentlicht (E-Pub)	7 Juni 2024
DOIs	https://doi.org/10.1109/lssc.2024.3411390
Publikationsstatus	Veröffentlicht - 7 Juni 2024

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Elektrotechnik und Elektronik

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10.1109/lssc.2024.3411390

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abstract = "Gallium Nitride (GaN) technology enables essential progress in energy efficiency and density, especially in off-line power supplies. This letter presents a monolithic GaN-IC, including a half-bridge, formed by two high-voltage power FETs with respective gate drivers and a high-voltage level shifter, forming a signal interface between high-side and low-side domain, making use of a GaN-on-SOI technology. Verified by experimental results, it achieves 500-V switching at 6.25 MHz and is thus well suited for off-line power supplies.",

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