Accurate determination of the characteristic impedance of lossy lines on chips based on high frequency S-parameter measurements

Thomas Michael Winkel; Lohit Sagar Dutta; Hartmut Grabinski

doi:10.1109/MCMC.1996.510793

Accurate determination of the characteristic impedance of lossy lines on chips based on high frequency S-parameter measurements

Thomas Michael Winkel^*
, Lohit Sagar Dutta
, Hartmut Grabinski

^*Korrespondierende*r Autor*in für diese Arbeit

Publikation: Konferenzbeitrag › Paper › Forschung › Peer-Review

Abstract

A very accurate, novel determination of the characteristic impedance of interconnects on semiconducting substrates has been developed. The method is based upon high frequency S-parameter measurements of two transmission lines of different lengths. The influence of the contact structures of the measurement probes are taken into account with the help of three additional measurements. The mathematical background of the method is presented. A comparison of the results obtained from measurements and from calculations is given and shows an excellent agreement.

Originalsprache	Englisch
Seiten	190-195
Seitenumfang	6
DOIs	https://doi.org/10.1109/MCMC.1996.510793
Publikationsstatus	Veröffentlicht - 1996
Veranstaltung	1996 IEEE Multi-Chip Module Conference - Santa Cruz, USA / Vereinigte Staaten Dauer: 6 Feb. 1996 → 7 Feb. 1996

Konferenz

Konferenz	1996 IEEE Multi-Chip Module Conference
Land/Gebiet	USA / Vereinigte Staaten
Ort	Santa Cruz
Zeitraum	6 Feb. 1996 → 7 Feb. 1996

ASJC Scopus Sachgebiete

Elektrotechnik und Elektronik

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10.1109/MCMC.1996.510793

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title = "Accurate determination of the characteristic impedance of lossy lines on chips based on high frequency S-parameter measurements",

abstract = "A very accurate, novel determination of the characteristic impedance of interconnects on semiconducting substrates has been developed. The method is based upon high frequency S-parameter measurements of two transmission lines of different lengths. The influence of the contact structures of the measurement probes are taken into account with the help of three additional measurements. The mathematical background of the method is presented. A comparison of the results obtained from measurements and from calculations is given and shows an excellent agreement.",

author = "Winkel, \{Thomas Michael\} and Dutta, \{Lohit Sagar\} and Hartmut Grabinski",

year = "1996",

doi = "10.1109/MCMC.1996.510793",

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note = "1996 IEEE Multi-Chip Module Conference ; Conference date: 06-02-1996 Through 07-02-1996",

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Accurate determination of the characteristic impedance of lossy lines on chips based on high frequency S-parameter measurements. / Winkel, Thomas Michael; Dutta, Lohit Sagar; Grabinski, Hartmut.
1996. 190-195 Beitrag in 1996 IEEE Multi-Chip Module Conference, Santa Cruz, California, USA / Vereinigte Staaten.

Publikation: Konferenzbeitrag › Paper › Forschung › Peer-Review

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AU - Dutta, Lohit Sagar

AU - Grabinski, Hartmut

PY - 1996

Y1 - 1996

N2 - A very accurate, novel determination of the characteristic impedance of interconnects on semiconducting substrates has been developed. The method is based upon high frequency S-parameter measurements of two transmission lines of different lengths. The influence of the contact structures of the measurement probes are taken into account with the help of three additional measurements. The mathematical background of the method is presented. A comparison of the results obtained from measurements and from calculations is given and shows an excellent agreement.

AB - A very accurate, novel determination of the characteristic impedance of interconnects on semiconducting substrates has been developed. The method is based upon high frequency S-parameter measurements of two transmission lines of different lengths. The influence of the contact structures of the measurement probes are taken into account with the help of three additional measurements. The mathematical background of the method is presented. A comparison of the results obtained from measurements and from calculations is given and shows an excellent agreement.

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