Back contact monocrystalline thin-film silicon solar cells from the porous silicon process

F. Haase; R. Horbelt; B. Terheiden; H. Plagwitz; R. Brendel

doi:10.1109/PVSC.2009.5411686

Back contact monocrystalline thin-film silicon solar cells from the porous silicon process

F. Haase^*
, R. Horbelt
, B. Terheiden
, H. Plagwitz
, R. Brendel

^*Korrespondierende*r Autor*in für diese Arbeit

Institut für Solarenergieforschung GmbH (ISFH)

Publikation: Beitrag in Buch/Bericht/Sammelwerk/Konferenzband › Aufsatz in Konferenzband › Forschung › Peer-Review

Abstract

We develop a back contact monocrystalline thin-film silicon solar cell using the porous silicon process. Laser processes are applied for all structuring steps. Thus no photolithography or other masking techniques are required. A single evaporation step is used to metallize the cell. Laser scribing is used for contact separation. The cell has a planar front surface, an area of 79.2 cm² and a cell thickness of 30 μm. We reach an efficiency of 13.5 %. The open-circuit voltage is 633 mV and the short-circuit current density is 28.7 mA/cm².

Originalsprache	Englisch
Titel des Sammelwerks	2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009
Seiten	244-246
Seitenumfang	3
ISBN (elektronisch)	9781424429509
DOIs	https://doi.org/10.1109/PVSC.2009.5411686
Publikationsstatus	Veröffentlicht - 2009
Extern publiziert	Ja
Veranstaltung	34th IEEE Photovoltaic Specialists Conference (PVSC 2009) - Philadelphia, PA, USA / Vereinigte Staaten Dauer: 7 Juni 2009 → 12 Juni 2009 Konferenznummer: 34

Publikationsreihe

Name	Conference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)	0160-8371

Konferenz

Konferenz	34th IEEE Photovoltaic Specialists Conference (PVSC 2009)
Kurztitel	PVSC 2009
Land/Gebiet	USA / Vereinigte Staaten
Ort	Philadelphia, PA
Zeitraum	7 Juni 2009 → 12 Juni 2009

ASJC Scopus Sachgebiete

Steuerungs- und Systemtechnik
Wirtschaftsingenieurwesen und Fertigungstechnik
Elektrotechnik und Elektronik

Zugriff auf Dokument

10.1109/PVSC.2009.5411686

Andere Dateien und Links

Verknüpfung zur Publikation in Scopus

Dieses zitieren

Haase, F., Horbelt, R., Terheiden, B., Plagwitz, H., & Brendel, R. (2009). Back contact monocrystalline thin-film silicon solar cells from the porous silicon process. in 2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009 (S. 244-246). Artikel 5411686 (Conference Record of the IEEE Photovoltaic Specialists Conference). https://doi.org/10.1109/PVSC.2009.5411686

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title = "Back contact monocrystalline thin-film silicon solar cells from the porous silicon process",

abstract = "We develop a back contact monocrystalline thin-film silicon solar cell using the porous silicon process. Laser processes are applied for all structuring steps. Thus no photolithography or other masking techniques are required. A single evaporation step is used to metallize the cell. Laser scribing is used for contact separation. The cell has a planar front surface, an area of 79.2 cm2 and a cell thickness of 30 μm. We reach an efficiency of 13.5 \%. The open-circuit voltage is 633 mV and the short-circuit current density is 28.7 mA/cm2.",

author = "F. Haase and R. Horbelt and B. Terheiden and H. Plagwitz and R. Brendel",

year = "2009",

doi = "10.1109/PVSC.2009.5411686",

language = "English",

isbn = "978-1-4244-2949-3",

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note = "34th IEEE Photovoltaic Specialists Conference (PVSC 2009) ; Conference date: 07-06-2009 Through 12-06-2009",

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Haase, F, Horbelt, R, Terheiden, B, Plagwitz, H & Brendel, R 2009, Back contact monocrystalline thin-film silicon solar cells from the porous silicon process. in 2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009., 5411686, Conference Record of the IEEE Photovoltaic Specialists Conference, S. 244-246, 34th IEEE Photovoltaic Specialists Conference (PVSC 2009), Philadelphia, PA, USA / Vereinigte Staaten, 7 Juni 2009. https://doi.org/10.1109/PVSC.2009.5411686

Back contact monocrystalline thin-film silicon solar cells from the porous silicon process. / Haase, F.; Horbelt, R.; Terheiden, B. et al.
2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009. 2009. S. 244-246 5411686 (Conference Record of the IEEE Photovoltaic Specialists Conference).

Publikation: Beitrag in Buch/Bericht/Sammelwerk/Konferenzband › Aufsatz in Konferenzband › Forschung › Peer-Review

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AB - We develop a back contact monocrystalline thin-film silicon solar cell using the porous silicon process. Laser processes are applied for all structuring steps. Thus no photolithography or other masking techniques are required. A single evaporation step is used to metallize the cell. Laser scribing is used for contact separation. The cell has a planar front surface, an area of 79.2 cm2 and a cell thickness of 30 μm. We reach an efficiency of 13.5 %. The open-circuit voltage is 633 mV and the short-circuit current density is 28.7 mA/cm2.

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