Chaotic potential on the degenerated semiconductor surface

Vyacheslav B. Bondarenko; Sergey N. Davydov; Bernard Nacke; Alexey V. Filimonov

doi:10.4028/www.scientific.net/KEM.806.17

Chaotic potential on the degenerated semiconductor surface

Vyacheslav B. Bondarenko
, Sergey N. Davydov
, Bernard Nacke
, Alexey V. Filimonov^*

^*Korrespondierende*r Autor*in für diese Arbeit

Institut für Elektroprozesstechnik

St. Petersburg State Polytechnical University

Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review

Abstract

In this paper, natural heterogeneities of the potential on the degenerated semiconductor surface are discussed as well as the barrier height fluctuations in metal-semiconductor contacts. In the case of electroactive dopant linear screening, characteristic values of chaotic potential amplitudes have been defined. The dependence is shown of these heterogeneities on semiconductor electrophysical parameters.

Originalsprache	Englisch
Seiten (von - bis)	17-23
Seitenumfang	7
Fachzeitschrift	Key Engineering Material:KEM
Jahrgang	806
DOIs	https://doi.org/10.4028/www.scientific.net/KEM.806.17
Publikationsstatus	Veröffentlicht - 11 Juni 2019

ASJC Scopus Sachgebiete

Allgemeine Materialwissenschaften
Werkstoffmechanik
Maschinenbau

Zugriff auf Dokument

10.4028/www.scientific.net/KEM.806.17

Andere Dateien und Links

Link zur Publikation in Scopus

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abstract = "In this paper, natural heterogeneities of the potential on the degenerated semiconductor surface are discussed as well as the barrier height fluctuations in metal-semiconductor contacts. In the case of electroactive dopant linear screening, characteristic values of chaotic potential amplitudes have been defined. The dependence is shown of these heterogeneities on semiconductor electrophysical parameters.",

keywords = "Chaotic potential, Degenerated semiconductor, GaAs, Semiconductor surface",

author = "Bondarenko, \{Vyacheslav B.\} and Davydov, \{Sergey N.\} and Bernard Nacke and Filimonov, \{Alexey V.\}",

note = "Funding information: This work was performed under the government order of the Ministry of Education and Science of RF project \# 11.5861.2017. B. Nacke and A. Filimonov would like to thank the DAAD Grant “Scientific Partnership with St. Petersburg State Polytechnic University and Leibniz Universit{\"a}t Hannover”.",

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AU - Davydov, Sergey N.

AU - Nacke, Bernard

AU - Filimonov, Alexey V.

N1 - Funding information: This work was performed under the government order of the Ministry of Education and Science of RF project # 11.5861.2017. B. Nacke and A. Filimonov would like to thank the DAAD Grant “Scientific Partnership with St. Petersburg State Polytechnic University and Leibniz Universität Hannover”.

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N2 - In this paper, natural heterogeneities of the potential on the degenerated semiconductor surface are discussed as well as the barrier height fluctuations in metal-semiconductor contacts. In the case of electroactive dopant linear screening, characteristic values of chaotic potential amplitudes have been defined. The dependence is shown of these heterogeneities on semiconductor electrophysical parameters.

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KW - Chaotic potential

KW - Degenerated semiconductor

KW - GaAs

KW - Semiconductor surface

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