@inproceedings{27cd98a0059b40469823d97a3a3326ee,
title = "Comparison of Experimental Emitter Saturation Current Densities and Simulated Defect Densities of Boron-Implanted Emitters",
abstract = "Ion implantation of boron is a promising technique for the preparation of p-type emitters in n-type silicon solar cells. Here, experimental emitter saturation current densities are compared with simulated defect densities, namely boron interstitial clusters and dislocation loops. We report on experimental conditions, which allow separating the specific impact of both defect types on the resulting electrical properties after annealing at 1050°C and surface passivation. In that way, dislocation loops are identified to be the dominating defect species under the used implant and annealing conditions.",
keywords = "boron interstitial clusters, crystal defects, dislocation loops, Ion implantation, process simulation, silicon, solar cells",
author = "Jan Kr{\"u}gener and Osten, \{H. J{\"o}rg\} and Fabian Kiefer and Robby Peibst",
year = "2017",
month = mar,
day = "20",
doi = "10.1109/iit.2016.7882856",
language = "English",
series = "Proceedings of the International Conference on Ion Implantation Technology",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2016 21st International Conference on Ion Implantation Technology, IIT 2016",
address = "United States",
note = "21st International Conference on Ion Implantation Technology, IIT 2016 ; Conference date: 26-09-2016 Through 30-09-2016",
}