Direct imaging of the lateral confinement potential in a self assembled single electron transistor

Publikation: Beitrag in Buch/Bericht/Sammelwerk/Konferenzband › Aufsatz in Konferenzband › Forschung

Originalsprache	Englisch
Titel des Sammelwerks	23rd International Conference on the Physics of Semiconductors
Seiten	3315-18
Band	4
Publikationsstatus	Veröffentlicht - 1996
Veranstaltung	23rd International Conference on the Physics of Semiconductors - Berlin, Deutschland Dauer: 21 Juli 1996 → 26 Juli 1996 Konferenznummer: 23

Konferenz	23rd International Conference on the Physics of Semiconductors
Land/Gebiet	Deutschland
Ort	Berlin
Zeitraum	21 Juli 1996 → 26 Juli 1996

Dieses zitieren

@inproceedings{0598238211234c7b93a73ead64c5f46b,

title = "Direct imaging of the lateral confinement potential in a self assembled single electron transistor",

author = "J. Christen and F. Bertram and M. Dilger and R.J. Haug and K. Eberl and \{von Klitzing\}, K. and D. Bimberg",

year = "1996",

language = "English",

isbn = "981-02-2777-9",

volume = "4",

pages = "3315--18",

booktitle = "23rd International Conference on the Physics of Semiconductors",

note = "23rd International Conference on the Physics of Semiconductors ; Conference date: 21-07-1996 Through 26-07-1996",

}

Christen, J, Bertram, F, Dilger, M, Haug, RJ, Eberl, K, von Klitzing, K & Bimberg, D 1996, Direct imaging of the lateral confinement potential in a self assembled single electron transistor. in 23rd International Conference on the Physics of Semiconductors. Bd. 4, S. 3315-18, 23rd International Conference on the Physics of Semiconductors, Berlin, Deutschland, 21 Juli 1996.

TY - GEN

T1 - Direct imaging of the lateral confinement potential in a self assembled single electron transistor

AU - Christen, J.

AU - Bertram, F.

AU - Dilger, M.

AU - Haug, R.J.

AU - Eberl, K.

AU - von Klitzing, K.

AU - Bimberg, D.

N1 - Conference code: 23

PY - 1996

Y1 - 1996

M3 - Conference contribution

SN - 981-02-2777-9

VL - 4

SP - 3315

EP - 3318

BT - 23rd International Conference on the Physics of Semiconductors

T2 - 23rd International Conference on the Physics of Semiconductors

Y2 - 21 July 1996 through 26 July 1996

ER -