Doping and temperature dependence of nuclear spin relaxation in n-type GaAs

L. Abaspour; P. Sterin; E. P. Rugeramigabo; J. Hübner; M. Oestreich

doi:10.1103/PhysRevB.102.235205

Doping and temperature dependence of nuclear spin relaxation in n-type GaAs

L. Abaspour
, P. Sterin
, E. P. Rugeramigabo
, J. Hübner^*
, M. Oestreich

^*Korrespondierende*r Autor*in für diese Arbeit

Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review

Abstract

We investigate the strong field nuclear spin relaxation rate in n-type GaAs for doping densities from the quasi-insulating over the metal-to-insulator up to the quasimetallic regime. The rate measured at 6.5 K increases in the quasi-insulating regime with doping density due to nuclear spin diffusion to the donor electrons and shows a distinct maximum at the critical density of the Mott metal-to-insulator transition. The density dependence of the nuclear spin relaxation rate can be quantitatively calculated over the whole density regime taking into account the effective number of localized electrons and the interaction of free electrons via the Korringa mechanism. Only the nuclear spin relaxation rate of the very lowest doped sample shows a significant deviation from these calculations. Temperature-dependent measurements suggest in this case an additional nuclear spin relaxation channel which is negligible at higher doping densities and is linked to the electron spin relaxation time.

Originalsprache	Englisch
Aufsatznummer	235205
Seitenumfang	7
Fachzeitschrift	Physical Review B
Jahrgang	102
Ausgabenummer	23
DOIs	https://doi.org/10.1103/PhysRevB.102.235205
Publikationsstatus	Veröffentlicht - 21 Dez. 2020

ASJC Scopus Sachgebiete

Elektronische, optische und magnetische Materialien
Physik der kondensierten Materie

Zugriff auf Dokument

10.1103/PhysRevB.102.235205

Andere Dateien und Links

Verknüpfung zur Publikation in Scopus

Spinrauschspektroskopie an nulldimensionalen Halbleiternanostrukturen
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Oestreich, M. (Projektleiter*in (Principal Investigator)), Danzmann, K. (beteiligte*r Wissenschaftler*in (Co-Investigator)), Ding, F. (beteiligte*r Wissenschaftler*in (Co-Investigator)), Hammerer, K. J. (beteiligte*r Wissenschaftler*in (Co-Investigator)), Haug, R. (beteiligte*r Wissenschaftler*in (Co-Investigator)), Heurs, M. (beteiligte*r Wissenschaftler*in (Co-Investigator)), Osborne, T. J. (beteiligte*r Wissenschaftler*in (Co-Investigator)), Ospelkaus-Schwarzer, S. (beteiligte*r Wissenschaftler*in (Co-Investigator)) & Werner, R. (beteiligte*r Wissenschaftler*in (Co-Investigator))
1 Okt. 2014 → 30 Sept. 2020
Projekt: Forschung

Dieses zitieren

@article{d58639f5a29042899b2d612156e6b7d7,

title = "Doping and temperature dependence of nuclear spin relaxation in n-type GaAs",

abstract = "We investigate the strong field nuclear spin relaxation rate in n-type GaAs for doping densities from the quasi-insulating over the metal-to-insulator up to the quasimetallic regime. The rate measured at 6.5 K increases in the quasi-insulating regime with doping density due to nuclear spin diffusion to the donor electrons and shows a distinct maximum at the critical density of the Mott metal-to-insulator transition. The density dependence of the nuclear spin relaxation rate can be quantitatively calculated over the whole density regime taking into account the effective number of localized electrons and the interaction of free electrons via the Korringa mechanism. Only the nuclear spin relaxation rate of the very lowest doped sample shows a significant deviation from these calculations. Temperature-dependent measurements suggest in this case an additional nuclear spin relaxation channel which is negligible at higher doping densities and is linked to the electron spin relaxation time.",

author = "L. Abaspour and P. Sterin and Rugeramigabo, \{E. P.\} and J. H{\"u}bner and M. Oestreich",

note = "Funding Information: We thank J. G. Lonnemann for support concerning the experimental method. This work was funded by the Deutsche Forschungsgemeinschaft (DFG, German Research Foundation) under Germany's Excellence Strategy-EXC-2123 QuantumFrontiers-390837967, research training group 1991, and OE 177/10-2, and the NTH School for Contacts in Nanosystems.",

year = "2020",

month = dec,

day = "21",

doi = "10.1103/PhysRevB.102.235205",

language = "English",

volume = "102",

journal = "Physical Review B",

issn = "2469-9950",

publisher = "American Physical Society",

number = "23",

}

TY - JOUR

T1 - Doping and temperature dependence of nuclear spin relaxation in n-type GaAs

AU - Abaspour, L.

AU - Sterin, P.

AU - Rugeramigabo, E. P.

AU - Hübner, J.

AU - Oestreich, M.

N1 - Funding Information: We thank J. G. Lonnemann for support concerning the experimental method. This work was funded by the Deutsche Forschungsgemeinschaft (DFG, German Research Foundation) under Germany's Excellence Strategy-EXC-2123 QuantumFrontiers-390837967, research training group 1991, and OE 177/10-2, and the NTH School for Contacts in Nanosystems.

PY - 2020/12/21

Y1 - 2020/12/21

N2 - We investigate the strong field nuclear spin relaxation rate in n-type GaAs for doping densities from the quasi-insulating over the metal-to-insulator up to the quasimetallic regime. The rate measured at 6.5 K increases in the quasi-insulating regime with doping density due to nuclear spin diffusion to the donor electrons and shows a distinct maximum at the critical density of the Mott metal-to-insulator transition. The density dependence of the nuclear spin relaxation rate can be quantitatively calculated over the whole density regime taking into account the effective number of localized electrons and the interaction of free electrons via the Korringa mechanism. Only the nuclear spin relaxation rate of the very lowest doped sample shows a significant deviation from these calculations. Temperature-dependent measurements suggest in this case an additional nuclear spin relaxation channel which is negligible at higher doping densities and is linked to the electron spin relaxation time.

AB - We investigate the strong field nuclear spin relaxation rate in n-type GaAs for doping densities from the quasi-insulating over the metal-to-insulator up to the quasimetallic regime. The rate measured at 6.5 K increases in the quasi-insulating regime with doping density due to nuclear spin diffusion to the donor electrons and shows a distinct maximum at the critical density of the Mott metal-to-insulator transition. The density dependence of the nuclear spin relaxation rate can be quantitatively calculated over the whole density regime taking into account the effective number of localized electrons and the interaction of free electrons via the Korringa mechanism. Only the nuclear spin relaxation rate of the very lowest doped sample shows a significant deviation from these calculations. Temperature-dependent measurements suggest in this case an additional nuclear spin relaxation channel which is negligible at higher doping densities and is linked to the electron spin relaxation time.

UR - https://www.scopus.com/pages/publications/85099159619

U2 - 10.1103/PhysRevB.102.235205

DO - 10.1103/PhysRevB.102.235205

M3 - Article

AN - SCOPUS:85099159619

SN - 2469-9950

VL - 102

JO - Physical Review B

JF - Physical Review B

IS - 23

M1 - 235205

ER -

Doping and temperature dependence of nuclear spin relaxation in n-type GaAs

Abstract

ASJC Scopus Sachgebiete

Zugriff auf Dokument

Andere Dateien und Links

Projekte

Spinrauschspektroskopie an nulldimensionalen Halbleiternanostrukturen

QuantumFrontiers: Exzellenzcluster 2123/1: Licht und Materie an der Quantengrenze

Graduiertenkolleg 1991: Quantenmechanisches Rauschen in komplexen Systemen

Dieses zitieren