High frequency conductance of a quantum point contact

J. Regul; F. Hohls; D. Reuter; A. D. Wieck; R. J. Haug

doi:10.1016/j.physe.2003.11.266

High frequency conductance of a quantum point contact

J. Regul
, F. Hohls^*
, D. Reuter
, A. D. Wieck
, R. J. Haug

^*Korrespondierende*r Autor*in für diese Arbeit

Institut für Festkörperphysik

Ruhr-Universität Bochum

Publikation: Beitrag in Fachzeitschrift › Konferenzaufsatz in Fachzeitschrift › Forschung › Peer-Review

Abstract

We present an experimental study of the AC conductance G_AC of an atomic force microscope engraved quantum point contact at high frequency f=160 MHz. In agreement with theoretical predictions the real part R(G_AC) is unchanged from the DC-conductance G_DC. The imaginary part I(G _AC) changes for every addition of a new conductance channel.

Originalsprache	Englisch
Seiten (von - bis)	272-275
Seitenumfang	4
Fachzeitschrift	Physica E: Low-Dimensional Systems and Nanostructures
Jahrgang	22
Ausgabenummer	1-3
DOIs	https://doi.org/10.1016/j.physe.2003.11.266
Publikationsstatus	Veröffentlicht - 7 Feb. 2004
Veranstaltung	15th International Conference on ELectronic Propreties - Nara, Japan Dauer: 14 Juli 2003 → 18 Juli 2003

ASJC Scopus Sachgebiete

Elektronische, optische und magnetische Materialien
Atom- und Molekularphysik sowie Optik
Physik der kondensierten Materie

Zugriff auf Dokument

10.1016/j.physe.2003.11.266

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title = "High frequency conductance of a quantum point contact",

abstract = "We present an experimental study of the AC conductance GAC of an atomic force microscope engraved quantum point contact at high frequency f=160 MHz. In agreement with theoretical predictions the real part R(GAC) is unchanged from the DC-conductance GDC. The imaginary part I(G AC) changes for every addition of a new conductance channel.",

keywords = "AFM lithography, High frequency conductance, Quantum point contact",

author = "J. Regul and F. Hohls and D. Reuter and Wieck, \{A. D.\} and Haug, \{R. J.\}",

note = "Funding information: We thank Ulrich Keyser for the AFM lithography and the AFM picture and we acknowledge financial support by the BMBF and the DFG.; 15th International Conference on ELectronic Propreties ; Conference date: 14-07-2003 Through 18-07-2003",

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T1 - High frequency conductance of a quantum point contact

AU - Regul, J.

AU - Hohls, F.

AU - Reuter, D.

AU - Wieck, A. D.

AU - Haug, R. J.

N1 - Funding information: We thank Ulrich Keyser for the AFM lithography and the AFM picture and we acknowledge financial support by the BMBF and the DFG.

PY - 2004/2/7

Y1 - 2004/2/7

N2 - We present an experimental study of the AC conductance GAC of an atomic force microscope engraved quantum point contact at high frequency f=160 MHz. In agreement with theoretical predictions the real part R(GAC) is unchanged from the DC-conductance GDC. The imaginary part I(G AC) changes for every addition of a new conductance channel.

AB - We present an experimental study of the AC conductance GAC of an atomic force microscope engraved quantum point contact at high frequency f=160 MHz. In agreement with theoretical predictions the real part R(GAC) is unchanged from the DC-conductance GDC. The imaginary part I(G AC) changes for every addition of a new conductance channel.

KW - AFM lithography

KW - High frequency conductance

KW - Quantum point contact

UR - https://www.scopus.com/pages/publications/1842785392

U2 - 10.1016/j.physe.2003.11.266

DO - 10.1016/j.physe.2003.11.266

M3 - Conference article

AN - SCOPUS:1842785392

SN - 1386-9477

VL - 22

SP - 272

EP - 275

JO - Physica E: Low-Dimensional Systems and Nanostructures

JF - Physica E: Low-Dimensional Systems and Nanostructures

IS - 1-3

T2 - 15th International Conference on ELectronic Propreties

Y2 - 14 July 2003 through 18 July 2003

ER -