HVPE-Grown GaAs//Si Tandem Device Performance

Kaitlyn Vansant; John Simon; Manuel Schnabel; John Geisz; Kevin Schulte; Aaron Ptak; Michelle Young; David Guiling; Waldo Olavarria; Michael Rienaecker; Henning Schulte-Huxel; Raphael Niepelt; Sarah Kajari-Schroeder; Rolf Brendel; Robby Peibst; Adele Tamboli

doi:10.1109/PVSC.2018.8547889

HVPE-Grown GaAs//Si Tandem Device Performance

Kaitlyn Vansant
, John Simon
, Manuel Schnabel
, John Geisz
, Kevin Schulte
, Aaron Ptak
, Michelle Young
, David Guiling
, Waldo Olavarria
, Michael Rienaecker
, Henning Schulte-Huxel
, Raphael Niepelt
, Sarah Kajari-Schroeder
, Rolf Brendel
, Robby Peibst
, Adele Tamboli

Publikation: Beitrag in Buch/Bericht/Sammelwerk/Konferenzband › Aufsatz in Konferenzband › Forschung › Peer-Review

Abstract

The performance of III-V//Si tandem devices has successfully exceeded the theoretical efficiency limit of single junction Si devices (29.4%) yet the costs associated with these high-efficiency tandem devices are still too high to compete with today's conventional Si solar cells. Recent cost modeling efforts suggest that hydride vapor phase epitaxy (HVPE) could be adopted as an alternative growth technique to metal-organic chemical vapor deposition (MOCVD) because the costs of HVPE are substantially lower and the performance of devices fabricated from HVPE materials are continuously improving. This study reports on our first results of a HVPE-grown GaAs top cell mechanically stacked on a Si bottom cell.

Originalsprache	Englisch
Titel des Sammelwerks	2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC
Herausgeber (Verlag)	Institute of Electrical and Electronics Engineers Inc.
Seiten	2776-2778
Seitenumfang	3
ISBN (elektronisch)	9781538685297
DOIs	https://doi.org/10.1109/PVSC.2018.8547889
Publikationsstatus	Veröffentlicht - 26 Nov. 2018
Extern publiziert	Ja
Veranstaltung	7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - Waikoloa Village, USA / Vereinigte Staaten Dauer: 10 Juni 2018 → 15 Juni 2018

Konferenz

Konferenz	7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018
Land/Gebiet	USA / Vereinigte Staaten
Ort	Waikoloa Village
Zeitraum	10 Juni 2018 → 15 Juni 2018

UN-Ziele für nachhaltige Entwicklung (SDGs)

2015 einigten sich die UN-Mitgliedstaaten auf 17 globale Ziele für nachhaltige Entwicklung (Sustainable Development Goals, SDGs) zur Beendigung von Armut, zum Schutz des Planeten und zur Förderung des allgemeinen Wohlstands. Hiermit leisten wir einen Beitrag zu folgendem/n Ziel(en) für nachhaltige Entwicklung (SDGs):

SDG 7 Erschwingliche und saubere Energie

ASJC Scopus Sachgebiete

Energieanlagenbau und Kraftwerkstechnik
Erneuerbare Energien, Nachhaltigkeit und Umwelt
Elektrotechnik und Elektronik
Elektronische, optische und magnetische Materialien

Zugriff auf Dokument

10.1109/PVSC.2018.8547889

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Verknüpfung zur Publikation in Scopus

Dieses zitieren

Vansant, K., Simon, J., Schnabel, M., Geisz, J., Schulte, K., Ptak, A., Young, M., Guiling, D., Olavarria, W., Rienaecker, M., Schulte-Huxel, H., Niepelt, R., Kajari-Schroeder, S., Brendel, R., Peibst, R., & Tamboli, A. (2018). HVPE-Grown GaAs//Si Tandem Device Performance. in 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC (S. 2776-2778). Artikel 8547889 Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2018.8547889

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title = "HVPE-Grown GaAs//Si Tandem Device Performance",

abstract = "The performance of III-V//Si tandem devices has successfully exceeded the theoretical efficiency limit of single junction Si devices (29.4\%) yet the costs associated with these high-efficiency tandem devices are still too high to compete with today's conventional Si solar cells. Recent cost modeling efforts suggest that hydride vapor phase epitaxy (HVPE) could be adopted as an alternative growth technique to metal-organic chemical vapor deposition (MOCVD) because the costs of HVPE are substantially lower and the performance of devices fabricated from HVPE materials are continuously improving. This study reports on our first results of a HVPE-grown GaAs top cell mechanically stacked on a Si bottom cell.",

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author = "Kaitlyn Vansant and John Simon and Manuel Schnabel and John Geisz and Kevin Schulte and Aaron Ptak and Michelle Young and David Guiling and Waldo Olavarria and Michael Rienaecker and Henning Schulte-Huxel and Raphael Niepelt and Sarah Kajari-Schroeder and Rolf Brendel and Robby Peibst and Adele Tamboli",

note = "Funding Information: We would like to thank Heike Kohlenberg at ISFH for his work performed in support of this publication. This work was authored in part by Alliance for Sustainable Energy, LLC, the manager and operator of the National Renewable Energy Laboratory for the U.S. Department of Energy (DOE) under Contract No. DE-AC36-08GO28308. Funding provided by the U.S. Department of Energy Office of Energy Efficiency and Renewable Energy Solar Energy Technologies Office under contract number DE-00030299. The views expressed in the article do not necessarily represent the views of the DOE or the U.S. Government. The U.S. Government retains and the publisher, by accepting the article for publication, acknowledges that the U.S. Government retains a nonexclusive, paid-up, irrevocable, worldwide license to publish or reproduce the published form of this work, or allow others to do so, for U.S. Government purposes. Work at ISFH was supported by the German Federal Ministry for Economic Affairs and Energy within the framework of the EASi research project (FKZ0324040), the European Union{\textquoteright}s Seventh Program for research, technological development and demonstration within the “HERCULES” project (grant agreement No 608498), and by the Ministry of Science and Culture of Lower Saxony. Publisher Copyright: {\textcopyright} 2018 IEEE. Copyright: Copyright 2019 Elsevier B.V., All rights reserved.; 7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018 ; Conference date: 10-06-2018 Through 15-06-2018",

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booktitle = "2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC",

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Vansant, K, Simon, J, Schnabel, M, Geisz, J, Schulte, K, Ptak, A, Young, M, Guiling, D, Olavarria, W, Rienaecker, M, Schulte-Huxel, H, Niepelt, R, Kajari-Schroeder, S, Brendel, R, Peibst, R & Tamboli, A 2018, HVPE-Grown GaAs//Si Tandem Device Performance. in 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC., 8547889, Institute of Electrical and Electronics Engineers Inc., S. 2776-2778, 7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018, Waikoloa Village, USA / Vereinigte Staaten, 10 Juni 2018. https://doi.org/10.1109/PVSC.2018.8547889

HVPE-Grown GaAs//Si Tandem Device Performance. / Vansant, Kaitlyn; Simon, John; Schnabel, Manuel et al.
2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC. Institute of Electrical and Electronics Engineers Inc., 2018. S. 2776-2778 8547889.

Publikation: Beitrag in Buch/Bericht/Sammelwerk/Konferenzband › Aufsatz in Konferenzband › Forschung › Peer-Review

TY - GEN

T1 - HVPE-Grown GaAs//Si Tandem Device Performance

AU - Vansant, Kaitlyn

AU - Simon, John

AU - Schnabel, Manuel

AU - Geisz, John

AU - Schulte, Kevin

AU - Ptak, Aaron

AU - Young, Michelle

AU - Guiling, David

AU - Olavarria, Waldo

AU - Rienaecker, Michael

AU - Schulte-Huxel, Henning

AU - Niepelt, Raphael

AU - Kajari-Schroeder, Sarah

AU - Brendel, Rolf

AU - Peibst, Robby

AU - Tamboli, Adele

N1 - Funding Information: We would like to thank Heike Kohlenberg at ISFH for his work performed in support of this publication. This work was authored in part by Alliance for Sustainable Energy, LLC, the manager and operator of the National Renewable Energy Laboratory for the U.S. Department of Energy (DOE) under Contract No. DE-AC36-08GO28308. Funding provided by the U.S. Department of Energy Office of Energy Efficiency and Renewable Energy Solar Energy Technologies Office under contract number DE-00030299. The views expressed in the article do not necessarily represent the views of the DOE or the U.S. Government. The U.S. Government retains and the publisher, by accepting the article for publication, acknowledges that the U.S. Government retains a nonexclusive, paid-up, irrevocable, worldwide license to publish or reproduce the published form of this work, or allow others to do so, for U.S. Government purposes. Work at ISFH was supported by the German Federal Ministry for Economic Affairs and Energy within the framework of the EASi research project (FKZ0324040), the European Union’s Seventh Program for research, technological development and demonstration within the “HERCULES” project (grant agreement No 608498), and by the Ministry of Science and Culture of Lower Saxony. Publisher Copyright: © 2018 IEEE. Copyright: Copyright 2019 Elsevier B.V., All rights reserved.

PY - 2018/11/26

Y1 - 2018/11/26

N2 - The performance of III-V//Si tandem devices has successfully exceeded the theoretical efficiency limit of single junction Si devices (29.4%) yet the costs associated with these high-efficiency tandem devices are still too high to compete with today's conventional Si solar cells. Recent cost modeling efforts suggest that hydride vapor phase epitaxy (HVPE) could be adopted as an alternative growth technique to metal-organic chemical vapor deposition (MOCVD) because the costs of HVPE are substantially lower and the performance of devices fabricated from HVPE materials are continuously improving. This study reports on our first results of a HVPE-grown GaAs top cell mechanically stacked on a Si bottom cell.

AB - The performance of III-V//Si tandem devices has successfully exceeded the theoretical efficiency limit of single junction Si devices (29.4%) yet the costs associated with these high-efficiency tandem devices are still too high to compete with today's conventional Si solar cells. Recent cost modeling efforts suggest that hydride vapor phase epitaxy (HVPE) could be adopted as an alternative growth technique to metal-organic chemical vapor deposition (MOCVD) because the costs of HVPE are substantially lower and the performance of devices fabricated from HVPE materials are continuously improving. This study reports on our first results of a HVPE-grown GaAs top cell mechanically stacked on a Si bottom cell.

KW - HVPE

KW - MOCVD

KW - multi-junction solar cells

KW - photovoltaic cells

KW - Solar energy

KW - tandems

UR - https://www.scopus.com/pages/publications/85059907962

U2 - 10.1109/PVSC.2018.8547889

DO - 10.1109/PVSC.2018.8547889

M3 - Conference contribution

AN - SCOPUS:85059907962

SP - 2776

EP - 2778

BT - 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018

Y2 - 10 June 2018 through 15 June 2018

ER -

Vansant K, Simon J, Schnabel M, Geisz J, Schulte K, Ptak A et al. HVPE-Grown GaAs//Si Tandem Device Performance. in 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC. Institute of Electrical and Electronics Engineers Inc. 2018. S. 2776-2778. 8547889 doi: 10.1109/PVSC.2018.8547889