Laser contact openings for local poly-Si-metal contacts enabling 26.1%-efficient POLO-IBC solar cells

Felix Haase; Christina Hollemann; Sören Schäfer; Agnes Merkle; Michael Rienäcker; Jan Krügener; Rolf Brendel; Robby Peibst

doi:10.1016/j.solmat.2018.06.020

Laser contact openings for local poly-Si-metal contacts enabling 26.1%-efficient POLO-IBC solar cells

Felix Haase^*
, Christina Hollemann
, Sören Schäfer
, Agnes Merkle
, Michael Rienäcker
, Jan Krügener
, Rolf Brendel
, Robby Peibst

^*Korrespondierende*r Autor*in für diese Arbeit

Institut für Solarenergieforschung GmbH (ISFH)

Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review

Abstract

We demonstrate damage-free laser contact openings in silicon oxide layers on polycrystalline silicon on oxide (POLO) passivating contacts. A pulsed UV-laser evaporates the upper part of the polycrystalline silicon layer, lifting off the silicon oxide layer on top. On n-type POLO (and p-type POLO, respectively) samples a saturation current density of 2 fA cm⁻² (6 fA cm⁻²) and an implied open-circuit voltage of 733 mV (727 mV) are achieved with a laser contact opening area fraction of 12.3% (8.7%). The application of this ablation process in an interdigitated back contact solar cell leads to an independently confirmed power conversion efficiency of 26.1%. The excellent contact quality of the laser contact openings is proven by the low series resistance of 0.1 Ω cm² on the solar cell with a contact area of only 3%.

Originalsprache	Englisch
Seiten (von - bis)	184-193
Seitenumfang	10
Fachzeitschrift	Solar Energy Materials and Solar Cells
Jahrgang	186
Elektronisch veröffentlicht (E-Pub)	30 Juni 2018
DOIs	https://doi.org/10.1016/j.solmat.2018.06.020
Publikationsstatus	Veröffentlicht - Nov. 2018

UN-Ziele für nachhaltige Entwicklung (SDGs)

2015 einigten sich die UN-Mitgliedstaaten auf 17 globale Ziele für nachhaltige Entwicklung (Sustainable Development Goals, SDGs) zur Beendigung von Armut, zum Schutz des Planeten und zur Förderung des allgemeinen Wohlstands. Hiermit leisten wir einen Beitrag zu folgendem/n Ziel(en) für nachhaltige Entwicklung (SDGs):

SDG 7 Erschwingliche und saubere Energie

ASJC Scopus Sachgebiete

Elektronische, optische und magnetische Materialien
Erneuerbare Energien, Nachhaltigkeit und Umwelt
Oberflächen, Beschichtungen und Folien

Zugriff auf Dokument

10.1016/j.solmat.2018.06.020

Andere Dateien und Links

Link zur Publikation in Scopus

Dieses zitieren

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title = "Laser contact openings for local poly-Si-metal contacts enabling 26.1\%-efficient POLO-IBC solar cells",

abstract = "We demonstrate damage-free laser contact openings in silicon oxide layers on polycrystalline silicon on oxide (POLO) passivating contacts. A pulsed UV-laser evaporates the upper part of the polycrystalline silicon layer, lifting off the silicon oxide layer on top. On n-type POLO (and p-type POLO, respectively) samples a saturation current density of 2 fA cm−2 (6 fA cm−2) and an implied open-circuit voltage of 733 mV (727 mV) are achieved with a laser contact opening area fraction of 12.3\% (8.7\%). The application of this ablation process in an interdigitated back contact solar cell leads to an independently confirmed power conversion efficiency of 26.1\%. The excellent contact quality of the laser contact openings is proven by the low series resistance of 0.1 Ω cm2 on the solar cell with a contact area of only 3\%.",

keywords = "Back-contact solar cell, Laser, Passivating contacts, POLO",

author = "Felix Haase and Christina Hollemann and S{\"o}ren Sch{\"a}fer and Agnes Merkle and Michael Rien{\"a}cker and Jan Kr{\"u}gener and Rolf Brendel and Robby Peibst",

note = "Funding information: The authors thank the Federal Ministry of Economic Affairs and Energy (BMWi) and the State of Lower Saxony for funding this work, Hilke Fischer, Annika Raugewitz, Sabine Schmidt (all from ISFH), Raymond Zieseniss and Guido Glowatzki (both from Institute of Electronic Materials and Devices) for sample processing, Jan Hensen (ISFH) for the SEM analysis and Tobias Neubert and David Sylla (both ISFH) for fruitful discussions about the laser process.",

year = "2018",

month = nov,

doi = "10.1016/j.solmat.2018.06.020",

language = "English",

volume = "186",

pages = "184--193",

journal = "Solar Energy Materials and Solar Cells",

issn = "0927-0248",

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T1 - Laser contact openings for local poly-Si-metal contacts enabling 26.1%-efficient POLO-IBC solar cells

AU - Haase, Felix

AU - Hollemann, Christina

AU - Schäfer, Sören

AU - Merkle, Agnes

AU - Rienäcker, Michael

AU - Krügener, Jan

AU - Brendel, Rolf

AU - Peibst, Robby

N1 - Funding information: The authors thank the Federal Ministry of Economic Affairs and Energy (BMWi) and the State of Lower Saxony for funding this work, Hilke Fischer, Annika Raugewitz, Sabine Schmidt (all from ISFH), Raymond Zieseniss and Guido Glowatzki (both from Institute of Electronic Materials and Devices) for sample processing, Jan Hensen (ISFH) for the SEM analysis and Tobias Neubert and David Sylla (both ISFH) for fruitful discussions about the laser process.

PY - 2018/11

Y1 - 2018/11

N2 - We demonstrate damage-free laser contact openings in silicon oxide layers on polycrystalline silicon on oxide (POLO) passivating contacts. A pulsed UV-laser evaporates the upper part of the polycrystalline silicon layer, lifting off the silicon oxide layer on top. On n-type POLO (and p-type POLO, respectively) samples a saturation current density of 2 fA cm−2 (6 fA cm−2) and an implied open-circuit voltage of 733 mV (727 mV) are achieved with a laser contact opening area fraction of 12.3% (8.7%). The application of this ablation process in an interdigitated back contact solar cell leads to an independently confirmed power conversion efficiency of 26.1%. The excellent contact quality of the laser contact openings is proven by the low series resistance of 0.1 Ω cm2 on the solar cell with a contact area of only 3%.

AB - We demonstrate damage-free laser contact openings in silicon oxide layers on polycrystalline silicon on oxide (POLO) passivating contacts. A pulsed UV-laser evaporates the upper part of the polycrystalline silicon layer, lifting off the silicon oxide layer on top. On n-type POLO (and p-type POLO, respectively) samples a saturation current density of 2 fA cm−2 (6 fA cm−2) and an implied open-circuit voltage of 733 mV (727 mV) are achieved with a laser contact opening area fraction of 12.3% (8.7%). The application of this ablation process in an interdigitated back contact solar cell leads to an independently confirmed power conversion efficiency of 26.1%. The excellent contact quality of the laser contact openings is proven by the low series resistance of 0.1 Ω cm2 on the solar cell with a contact area of only 3%.

KW - Back-contact solar cell

KW - Laser

KW - Passivating contacts

KW - POLO

UR - https://www.scopus.com/pages/publications/85048171181

U2 - 10.1016/j.solmat.2018.06.020

DO - 10.1016/j.solmat.2018.06.020

M3 - Article

AN - SCOPUS:85048171181

SN - 0927-0248

VL - 186

SP - 184

EP - 193

JO - Solar Energy Materials and Solar Cells

JF - Solar Energy Materials and Solar Cells

ER -