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Low-temperature internal quantum efficiency of GaInN/GaN quantum wells under steady-state conditions

  • Shawutijiang Sidikejiang*
  • , Philipp Henning
  • , Philipp Horenburg
  • , Heiko Bremers
  • , Uwe Rossow
  • , Dirk Menzel
  • , Andreas Hangleiter
    • *Korrespondierende*r Autor*in für diese Arbeit

Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review

Abstract

We compare the low-temperature photoluminescence (PL) intensities of a range of GaInN/GaN quantum well (QW) structures under identical excitation conditions, mounting the samples side by side. Normalizing the measured intensity to the absorbed power density in the QWs, we find that low-temperature PL efficiencies of several samples, which show close to 100% internal quantum efficiency (IQE) in time-resolved PL, saturate at nearly an identical value. Of course, this is strong indicative of being 100% IQE at low temperature for those efficient samples. Using the low-temperature PL efficiency as a 'Reference', on the other hand, we observe not only the effects of temperature-independent non-radiative losses on the low-temperature IQE, but also are able to determine the IQE of arbitrary samples on an absolute scale. Furthermore, we prove the experimental results by comparing the low-temperature efficiencies of a sample with an initial 100% IQE after intentionally introducing structural defects with argon-implantation.

OriginalspracheEnglisch
Aufsatznummer035017
FachzeitschriftSemiconductor Science and Technology
Jahrgang37
Ausgabenummer3
DOIs
PublikationsstatusVeröffentlicht - 31 Jan. 2022
Extern publiziertJa

ASJC Scopus Sachgebiete

  • Elektronische, optische und magnetische Materialien
  • Physik der kondensierten Materie
  • Werkstoffchemie
  • Elektrotechnik und Elektronik

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