Magnetoresistance anisotropy in Si/SiGe in tilted magnetic fields: Experimental evidence for a stripe-phase formation

U. Zeitler; H. W. Schumacher; A. G.M. Jansen; R. J. Haug

doi:10.1103/PhysRevLett.86.866

Magnetoresistance anisotropy in Si/SiGe in tilted magnetic fields: Experimental evidence for a stripe-phase formation

U. Zeitler^*
, H. W. Schumacher
, A. G.M. Jansen
, R. J. Haug

^*Korrespondierende*r Autor*in für diese Arbeit

Institut für Festkörperphysik

Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review

Abstract

The anisotropies induced by an in-plane field in the magnetotransport properties of coinciding Landau levels in the two dimensional electron system of a silicon/silicon germanium (Si/SiGe) heterostructure were investigated. The anisotropies were caused by the formation of a unidirectional stripe phase from two Landau levels with opposite spin of electrons.

Originalsprache	Englisch
Seiten (von - bis)	866-869
Seitenumfang	4
Fachzeitschrift	Physical review letters
Jahrgang	86
Ausgabenummer	5
DOIs	https://doi.org/10.1103/PhysRevLett.86.866
Publikationsstatus	Veröffentlicht - 29 Jan. 2001

ASJC Scopus Sachgebiete

Allgemeine Physik und Astronomie

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10.1103/PhysRevLett.86.866

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abstract = "The anisotropies induced by an in-plane field in the magnetotransport properties of coinciding Landau levels in the two dimensional electron system of a silicon/silicon germanium (Si/SiGe) heterostructure were investigated. The anisotropies were caused by the formation of a unidirectional stripe phase from two Landau levels with opposite spin of electrons.",

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