Abstract
The mechanism of voltage generation in thin metal film detectors is investigated. For this purpose non‐oxidized Bi films of different widths and thicknesses are prepared and irradiated by a cw Nd‐Yag laser. Voltages are detected in all the samples. In order to detect nanosecond pulses, a pulsed Nd‐Yag laser is used to irradiate oxidized as well as non‐oxidized samples. Pulse lengths of 14 ns are observed by thin Bi film detectors. A theoretical calculation of voltage as a function of thickness is made by calculating the temperature rise in the Bi films and compared with the measured voltages.
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | 255-259 |
| Seitenumfang | 5 |
| Fachzeitschrift | Physica Status Solidi (A) Applied Research |
| Jahrgang | 109 |
| Ausgabenummer | 1 |
| DOIs | |
| Publikationsstatus | Veröffentlicht - 16 Sept. 1988 |
ASJC Scopus Sachgebiete
- Elektronische, optische und magnetische Materialien
- Physik der kondensierten Materie
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