Spin-reversed quasielectron excitations in the -filling fractional-quantum-Hall-effect state

We report on the effect of an in-plane magnetic field component on the magnetoresistance of the two-dimensional electron system (2DES) and capacitance between the 2DES and gate. The appearance of the ν=1/3 and ν=2/3 fractional-quantum-Hall-effect (FQHE) states has been observed to modify the effect at ν≳2/3. Our results imply the existence of the spin-reversed quasielectron excitations in the ν=2/3 FQHE. Charged excitations with large numbers of reversed spins (skyrmions) recently predicted for the ν=1/3 FQHE state have not been found.