Steps on current-voltage characteristics of a silicon quantum dot covered by natural oxide

Considering a double-barrier structure formed by a silicon quantum dot covered by natural oxide with two metallic terminals, we derive simple conditions for a steplike voltage-current curve. Due to standard chemical properties, doping phosphorus atoms located in a certain domain of the dot form geometrically parallel current channels. The height of the current step typically equals (1.2 pA)N, where N = 0, 1, 2, 3... is the number of doping atoms inside the domain, and only negligibly depends on the actual position of the dopants. The found conditions are feasible in experimentally available structures.