Transferring the Record p-type Si POLO-IBC Cell Technology Towards an Industrial Level

Felix Haase; Christina Hollemann; Soren Schafer; Jan Krügener; Rolf Brendel; Robby Peibst

doi:10.1109/pvsc40753.2019.8980960

Transferring the Record p-type Si POLO-IBC Cell Technology Towards an Industrial Level

Felix Haase
, Christina Hollemann
, Soren Schafer
, Jan Krügener
, Rolf Brendel
, Robby Peibst

Institut für Solarenergieforschung GmbH (ISFH)

Publikation: Beitrag in Buch/Bericht/Sammelwerk/Konferenzband › Aufsatz in Konferenzband › Forschung › Peer-Review

Abstract

We report on the transfer of our lab-type POLO²-IBC process with POLO contacts for both polarities towards an industrial level. Here we demonstrate a shortened cell fabrication process that uses p-type wafers and keeps the Al-back surface field of the PERC process but substitutes the phosphorous diffusion by a n-type poly-Si deposition. The resulting POLO-IBC process is similarly short as the PERC process. A high lifetime with the Cz material and highly selective POLO junctions require a reduce thermal budget and a reduced thickness of the interfacial oxide compared to our previous lab cells that used FZ silicon wafers. Our POLO-IBC cells have an efficiency potential of 24.5 % as deduced from simulations. We measure an efficiency of 21.8 % after finishing the first cell batch. For a cell from our second cell batch with improved passivation we measure an implied pseudo efficiency of 25.2 % before laser contact openings.

Originalsprache	Englisch
Titel des Sammelwerks	2019 IEEE 46th Photovoltaic Specialists Conference, PVSC 2019
Untertitel	Proceedings
Herausgeber (Verlag)	Institute of Electrical and Electronics Engineers Inc.
Seiten	2200-2206
Seitenumfang	7
ISBN (elektronisch)	978-1-7281-0494-2
ISBN (Print)	978-1-7281-0495-9
DOIs	https://doi.org/10.1109/pvsc40753.2019.8980960
Publikationsstatus	Veröffentlicht - Juni 2019
Veranstaltung	46th IEEE Photovoltaic Specialists Conference, PVSC 2019 - Chicago, USA / Vereinigte Staaten Dauer: 16 Juni 2019 → 21 Juni 2019

Publikationsreihe

Name	Conference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)	0160-8371

Konferenz

Konferenz	46th IEEE Photovoltaic Specialists Conference, PVSC 2019
Land/Gebiet	USA / Vereinigte Staaten
Ort	Chicago
Zeitraum	16 Juni 2019 → 21 Juni 2019

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2015 einigten sich die UN-Mitgliedstaaten auf 17 globale Ziele für nachhaltige Entwicklung (Sustainable Development Goals, SDGs) zur Beendigung von Armut, zum Schutz des Planeten und zur Förderung des allgemeinen Wohlstands. Hiermit leisten wir einen Beitrag zu folgendem/n Ziel(en) für nachhaltige Entwicklung (SDGs):

SDG 7 Erschwingliche und saubere Energie

ASJC Scopus Sachgebiete

Steuerungs- und Systemtechnik
Wirtschaftsingenieurwesen und Fertigungstechnik
Elektrotechnik und Elektronik

Zugriff auf Dokument

10.1109/pvsc40753.2019.8980960

Andere Dateien und Links

Link zur Publikation in Scopus

Dieses zitieren

Haase, F., Hollemann, C., Schafer, S., Krügener, J., Brendel, R., & Peibst, R. (2019). Transferring the Record p-type Si POLO-IBC Cell Technology Towards an Industrial Level. in 2019 IEEE 46th Photovoltaic Specialists Conference, PVSC 2019: Proceedings (S. 2200-2206). Artikel 8980960 (Conference Record of the IEEE Photovoltaic Specialists Conference). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/pvsc40753.2019.8980960

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title = "Transferring the Record p-type Si POLO-IBC Cell Technology Towards an Industrial Level",

abstract = "We report on the transfer of our lab-type POLO2-IBC process with POLO contacts for both polarities towards an industrial level. Here we demonstrate a shortened cell fabrication process that uses p-type wafers and keeps the Al-back surface field of the PERC process but substitutes the phosphorous diffusion by a n-type poly-Si deposition. The resulting POLO-IBC process is similarly short as the PERC process. A high lifetime with the Cz material and highly selective POLO junctions require a reduce thermal budget and a reduced thickness of the interfacial oxide compared to our previous lab cells that used FZ silicon wafers. Our POLO-IBC cells have an efficiency potential of 24.5 \% as deduced from simulations. We measure an efficiency of 21.8 \% after finishing the first cell batch. For a cell from our second cell batch with improved passivation we measure an implied pseudo efficiency of 25.2 \% before laser contact openings.",

keywords = "loss analysis, photovoltaic cells, POLO passivating contacts, screen printing",

author = "Felix Haase and Christina Hollemann and Soren Schafer and Jan Kr{\"u}gener and Rolf Brendel and Robby Peibst",

note = "Funding information: The authors thank the Federal Ministry of Economic Affairs and Energy (BMWi) under grant number 0324275A (Street) and the State of Lower Saxony for funding this work, Anja Christ, Miriam Berger, Hilke Fischer, Annika Raugewitz, Ulrike Baumann, Till Brendem{\"u}hl, Sonja Br{\"a}unig and Birgit Beier (all from ISFH), Raymond Zieseniss and Guido Glowatzki (both from Institute of Electronic Materials and Devices) for sample processing, Bettina Wolpensinger (ISFH) for the SEM analysis and Tobias Neubert and David Sylla (both ISFH) for laser processing and drawing the layout for screen printing.; 46th IEEE Photovoltaic Specialists Conference, PVSC 2019 ; Conference date: 16-06-2019 Through 21-06-2019",

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Haase, F, Hollemann, C, Schafer, S, Krügener, J , Brendel, R & Peibst, R 2019, Transferring the Record p-type Si POLO-IBC Cell Technology Towards an Industrial Level. in 2019 IEEE 46th Photovoltaic Specialists Conference, PVSC 2019: Proceedings., 8980960, Conference Record of the IEEE Photovoltaic Specialists Conference, Institute of Electrical and Electronics Engineers Inc., S. 2200-2206, 46th IEEE Photovoltaic Specialists Conference, PVSC 2019, Chicago, USA / Vereinigte Staaten, 16 Juni 2019. https://doi.org/10.1109/pvsc40753.2019.8980960

Transferring the Record p-type Si POLO-IBC Cell Technology Towards an Industrial Level. / Haase, Felix; Hollemann, Christina; Schafer, Soren et al.
2019 IEEE 46th Photovoltaic Specialists Conference, PVSC 2019: Proceedings. Institute of Electrical and Electronics Engineers Inc., 2019. S. 2200-2206 8980960 (Conference Record of the IEEE Photovoltaic Specialists Conference).

Publikation: Beitrag in Buch/Bericht/Sammelwerk/Konferenzband › Aufsatz in Konferenzband › Forschung › Peer-Review

TY - GEN

T1 - Transferring the Record p-type Si POLO-IBC Cell Technology Towards an Industrial Level

AU - Haase, Felix

AU - Hollemann, Christina

AU - Schafer, Soren

AU - Krügener, Jan

AU - Brendel, Rolf

AU - Peibst, Robby

N1 - Funding information: The authors thank the Federal Ministry of Economic Affairs and Energy (BMWi) under grant number 0324275A (Street) and the State of Lower Saxony for funding this work, Anja Christ, Miriam Berger, Hilke Fischer, Annika Raugewitz, Ulrike Baumann, Till Brendemühl, Sonja Bräunig and Birgit Beier (all from ISFH), Raymond Zieseniss and Guido Glowatzki (both from Institute of Electronic Materials and Devices) for sample processing, Bettina Wolpensinger (ISFH) for the SEM analysis and Tobias Neubert and David Sylla (both ISFH) for laser processing and drawing the layout for screen printing.

PY - 2019/6

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N2 - We report on the transfer of our lab-type POLO2-IBC process with POLO contacts for both polarities towards an industrial level. Here we demonstrate a shortened cell fabrication process that uses p-type wafers and keeps the Al-back surface field of the PERC process but substitutes the phosphorous diffusion by a n-type poly-Si deposition. The resulting POLO-IBC process is similarly short as the PERC process. A high lifetime with the Cz material and highly selective POLO junctions require a reduce thermal budget and a reduced thickness of the interfacial oxide compared to our previous lab cells that used FZ silicon wafers. Our POLO-IBC cells have an efficiency potential of 24.5 % as deduced from simulations. We measure an efficiency of 21.8 % after finishing the first cell batch. For a cell from our second cell batch with improved passivation we measure an implied pseudo efficiency of 25.2 % before laser contact openings.

AB - We report on the transfer of our lab-type POLO2-IBC process with POLO contacts for both polarities towards an industrial level. Here we demonstrate a shortened cell fabrication process that uses p-type wafers and keeps the Al-back surface field of the PERC process but substitutes the phosphorous diffusion by a n-type poly-Si deposition. The resulting POLO-IBC process is similarly short as the PERC process. A high lifetime with the Cz material and highly selective POLO junctions require a reduce thermal budget and a reduced thickness of the interfacial oxide compared to our previous lab cells that used FZ silicon wafers. Our POLO-IBC cells have an efficiency potential of 24.5 % as deduced from simulations. We measure an efficiency of 21.8 % after finishing the first cell batch. For a cell from our second cell batch with improved passivation we measure an implied pseudo efficiency of 25.2 % before laser contact openings.

KW - loss analysis

KW - photovoltaic cells

KW - POLO passivating contacts

KW - screen printing

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DO - 10.1109/pvsc40753.2019.8980960

M3 - Conference contribution

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T3 - Conference Record of the IEEE Photovoltaic Specialists Conference

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BT - 2019 IEEE 46th Photovoltaic Specialists Conference, PVSC 2019

PB - Institute of Electrical and Electronics Engineers Inc.

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ER -

Haase F, Hollemann C, Schafer S, Krügener J , Brendel R, Peibst R. Transferring the Record p-type Si POLO-IBC Cell Technology Towards an Industrial Level. in 2019 IEEE 46th Photovoltaic Specialists Conference, PVSC 2019: Proceedings. Institute of Electrical and Electronics Engineers Inc. 2019. S. 2200-2206. 8980960. (Conference Record of the IEEE Photovoltaic Specialists Conference). doi: 10.1109/pvsc40753.2019.8980960