Abstract
A computer simulation is carried out to study the dopant concentration fields in the molten zone and in the growing crystal for the floating zone (FZ) growth of large (> 100 mm) Si crystals with the needle-eye technique and with feed/crystal rotation. The mathematical model developed in the previous work is used to calculate the shape of the molten zone and the velocity field in the melt. The influence of melt convection on the dopant concentration field is considered. The significance of the rotation scheme of the feed rod and crystal on the dopant distribution is investigated. The calculated dopant concentration directly at the growth interface is used to determine the normalized lateral resistivity distribution in the single crystal. The calculated resistivity distributions are compared with lateral spreading resistivity measurements in the single crystal.
| Original language | English |
|---|---|
| Pages (from-to) | 372-380 |
| Number of pages | 9 |
| Journal | Journal of crystal growth |
| Volume | 180 |
| Issue number | 3-4 |
| DOIs | |
| Publication status | Published - Oct 1997 |
Keywords
- Dopant concentration field
- Finite-element method
- Floating zone growth
- Si crystal
ASJC Scopus subject areas
- Condensed Matter Physics
- Inorganic Chemistry
- Materials Chemistry
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