Abstract
We develop a back contact monocrystalline thin-film silicon solar cell using the porous silicon process. Laser processes are applied for all structuring steps. Thus no photolithography or other masking techniques are required. A single evaporation step is used to metallize the cell. Laser scribing is used for contact separation. The cell has a planar front surface, an area of 79.2 cm2 and a cell thickness of 30 μm. We reach an efficiency of 13.5 %. The open-circuit voltage is 633 mV and the short-circuit current density is 28.7 mA/cm2.
| Original language | English |
|---|---|
| Title of host publication | 2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009 |
| Pages | 244-246 |
| Number of pages | 3 |
| ISBN (Electronic) | 9781424429509 |
| DOIs | |
| Publication status | Published - 2009 |
| Externally published | Yes |
| Event | 34th IEEE Photovoltaic Specialists Conference (PVSC 2009) - Philadelphia, PA, United States Duration: 7 Jun 2009 → 12 Jun 2009 Conference number: 34 |
Publication series
| Name | Conference Record of the IEEE Photovoltaic Specialists Conference |
|---|---|
| ISSN (Print) | 0160-8371 |
Conference
| Conference | 34th IEEE Photovoltaic Specialists Conference (PVSC 2009) |
|---|---|
| Abbreviated title | PVSC 2009 |
| Country/Territory | United States |
| City | Philadelphia, PA |
| Period | 7 Jun 2009 → 12 Jun 2009 |
ASJC Scopus subject areas
- Control and Systems Engineering
- Industrial and Manufacturing Engineering
- Electrical and Electronic Engineering
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