TY - GEN
T1 - Carbon doping of SiGe heterobipolar transistors
AU - Osten, H. J.
AU - Knoll, D.
AU - Heinemann, B.
AU - Tillack, B.
PY - 2022/8/6
Y1 - 2022/8/6
N2 - We demonstrate cutoff and maximum oscillation frequencies of more than 70 GHz, and delays per stage down to 15 ps for ring oscillators with integrated SiGe:C heterobipolar transistors (HBT). We also demonstrate almost ideal base current characteristics for these, even with carbon in the depleted regions. The incorporation of low carbon concentration (<1020 cm-3) within the SiGe region of SiGe HBTs can significantly suppress boron outdiffusion caused by a variety of subsequent processing steps. For example, transient enhanced boron diffusion due to BF2 implantation of the external base regions can be eliminated. Thus, the use of epitaxial SiGe:C instead of SiGe layers provides greater flexibility in process design, and wider latitude in process margin.
AB - We demonstrate cutoff and maximum oscillation frequencies of more than 70 GHz, and delays per stage down to 15 ps for ring oscillators with integrated SiGe:C heterobipolar transistors (HBT). We also demonstrate almost ideal base current characteristics for these, even with carbon in the depleted regions. The incorporation of low carbon concentration (<1020 cm-3) within the SiGe region of SiGe HBTs can significantly suppress boron outdiffusion caused by a variety of subsequent processing steps. For example, transient enhanced boron diffusion due to BF2 implantation of the external base regions can be eliminated. Thus, the use of epitaxial SiGe:C instead of SiGe layers provides greater flexibility in process design, and wider latitude in process margin.
UR - https://www.scopus.com/pages/publications/84988915376
U2 - 10.1109/SMIC.1998.750170
DO - 10.1109/SMIC.1998.750170
M3 - Conference contribution
AN - SCOPUS:84988915376
T3 - 1998 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 1998
SP - 19
EP - 23
BT - 1998 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 1998
A2 - Kayali, Sammy
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 1st Topical Meeting on Silicon Mono1ithic Integrated Circuits in RF Systems, SiRF 1998
Y2 - 18 September 1998 through 18 September 1998
ER -