Chaotic potential on the degenerated semiconductor surface

Vyacheslav B. Bondarenko; Sergey N. Davydov; Bernard Nacke; Alexey V. Filimonov

doi:10.4028/www.scientific.net/KEM.806.17

Chaotic potential on the degenerated semiconductor surface

Vyacheslav B. Bondarenko
, Sergey N. Davydov
, Bernard Nacke
, Alexey V. Filimonov^*

^*Corresponding author for this work

Institute of Electrothermic Process Engineering

St. Petersburg State Polytechnical University

Research output: Contribution to journal › Article › Research › peer review

Abstract

In this paper, natural heterogeneities of the potential on the degenerated semiconductor surface are discussed as well as the barrier height fluctuations in metal-semiconductor contacts. In the case of electroactive dopant linear screening, characteristic values of chaotic potential amplitudes have been defined. The dependence is shown of these heterogeneities on semiconductor electrophysical parameters.

Original language	English
Pages (from-to)	17-23
Number of pages	7
Journal	Key Engineering Material:KEM
Volume	806
DOIs	https://doi.org/10.4028/www.scientific.net/KEM.806.17
Publication status	Published - 11 Jun 2019

Keywords

Chaotic potential
Degenerated semiconductor
GaAs
Semiconductor surface

ASJC Scopus subject areas

General Materials Science
Mechanics of Materials
Mechanical Engineering

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10.4028/www.scientific.net/KEM.806.17

Cite this

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title = "Chaotic potential on the degenerated semiconductor surface",

abstract = "In this paper, natural heterogeneities of the potential on the degenerated semiconductor surface are discussed as well as the barrier height fluctuations in metal-semiconductor contacts. In the case of electroactive dopant linear screening, characteristic values of chaotic potential amplitudes have been defined. The dependence is shown of these heterogeneities on semiconductor electrophysical parameters.",

keywords = "Chaotic potential, Degenerated semiconductor, GaAs, Semiconductor surface",

author = "Bondarenko, \{Vyacheslav B.\} and Davydov, \{Sergey N.\} and Bernard Nacke and Filimonov, \{Alexey V.\}",

note = "Funding information: This work was performed under the government order of the Ministry of Education and Science of RF project \# 11.5861.2017. B. Nacke and A. Filimonov would like to thank the DAAD Grant “Scientific Partnership with St. Petersburg State Polytechnic University and Leibniz Universit{\"a}t Hannover”.",

year = "2019",

month = jun,

day = "11",

doi = "10.4028/www.scientific.net/KEM.806.17",

language = "English",

volume = "806",

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journal = "Key Engineering Material:KEM",

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T1 - Chaotic potential on the degenerated semiconductor surface

AU - Bondarenko, Vyacheslav B.

AU - Davydov, Sergey N.

AU - Nacke, Bernard

AU - Filimonov, Alexey V.

N1 - Funding information: This work was performed under the government order of the Ministry of Education and Science of RF project # 11.5861.2017. B. Nacke and A. Filimonov would like to thank the DAAD Grant “Scientific Partnership with St. Petersburg State Polytechnic University and Leibniz Universität Hannover”.

PY - 2019/6/11

Y1 - 2019/6/11

N2 - In this paper, natural heterogeneities of the potential on the degenerated semiconductor surface are discussed as well as the barrier height fluctuations in metal-semiconductor contacts. In the case of electroactive dopant linear screening, characteristic values of chaotic potential amplitudes have been defined. The dependence is shown of these heterogeneities on semiconductor electrophysical parameters.

AB - In this paper, natural heterogeneities of the potential on the degenerated semiconductor surface are discussed as well as the barrier height fluctuations in metal-semiconductor contacts. In the case of electroactive dopant linear screening, characteristic values of chaotic potential amplitudes have been defined. The dependence is shown of these heterogeneities on semiconductor electrophysical parameters.

KW - Chaotic potential

KW - Degenerated semiconductor

KW - GaAs

KW - Semiconductor surface

UR - https://www.scopus.com/pages/publications/85067295222

U2 - 10.4028/www.scientific.net/KEM.806.17

DO - 10.4028/www.scientific.net/KEM.806.17

M3 - Article

AN - SCOPUS:85067295222

SN - 1013-9826

VL - 806

SP - 17

EP - 23

JO - Key Engineering Material:KEM

JF - Key Engineering Material:KEM

ER -

Chaotic potential on the degenerated semiconductor surface

Abstract

Keywords

ASJC Scopus subject areas

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