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Direct observation of the rotational direction of electron spin precession in semiconductors

Michael Oestreich*, Daniel Hägele, H. C. Schneider, A. Knorr, A. Hansch, S. Hallstein, Klaus H. Schmidt, K. Köhler, Stephan W. Koch, W. W. Rühle

*Corresponding author for this work

Research output: Contribution to journalArticleResearchpeer review

Abstract

A new experimental method is presented to determine the sign of the electron Landé g factor in semiconductors by time-resolved magneto photoluminescence. This technique is used to demonstrate the reversal of the electron g factor for different material compositions. Measurements and theoretical estimates for the spin dynamics in quantum well systems are compared.

Original languageEnglish
Pages (from-to)753-758
Number of pages6
JournalSolid State Communications
Volume108
Issue number10
DOIs
Publication statusPublished - 5 Nov 1998
Externally publishedYes

Keywords

  • A. Semiconductors
  • D. Spin dynamics
  • E. Luminescence
  • E. Time-resolved optical spectroscopy

ASJC Scopus subject areas

  • General Chemistry
  • Condensed Matter Physics
  • Materials Chemistry

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