Edge Doping in Graphene Devices on SiO2 Substrates

G. Yu Vasilyeva; D. Smirnov; Yu B. Vasilyev; A. A. Greshnov; Rolf J. Haug

doi:10.1134/s1063782619160292

Edge Doping in Graphene Devices on SiO₂ Substrates

G. Yu Vasilyeva
, D. Smirnov
, Yu B. Vasilyev
, A. A. Greshnov^*
, Rolf J. Haug

^*Corresponding author for this work

Institute of Solid State Physics

Research output: Contribution to journal › Article › Research › peer review

Abstract

The conductivity of single layer and bilayer graphene ribbons 0.5–4 μm in width fabricated by oxygen plasma etching is studied experimentally. The dependence of the electron concentration in graphene on the ribbon width is revealed. This effect is explained by the edge doping of graphene due to defects arranged in SiO₂ near the ribbon edges. The method of the formation of abrupt p–n junctions in graphene and structures with a constant electron concentration gradient in the graphene plane with the help of edge doping is proposed.

Original language	English
Pages (from-to)	1672-1676
Number of pages	5
Journal	Semiconductors
Volume	53
Issue number	12
DOIs	https://doi.org/10.1134/s1063782619160292
Publication status	Published - 1 Dec 2019

Keywords

defects
edge doping
graphene
plasma etching
substrate

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics

Access to Document

10.1134/s1063782619160292

Cite this

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title = "Edge Doping in Graphene Devices on SiO2 Substrates",

abstract = "The conductivity of single layer and bilayer graphene ribbons 0.5–4 μm in width fabricated by oxygen plasma etching is studied experimentally. The dependence of the electron concentration in graphene on the ribbon width is revealed. This effect is explained by the edge doping of graphene due to defects arranged in SiO2 near the ribbon edges. The method of the formation of abrupt p–n junctions in graphene and structures with a constant electron concentration gradient in the graphene plane with the help of edge doping is proposed.",

keywords = "defects, edge doping, graphene, plasma etching, substrate",

author = "Vasilyeva, \{G. Yu\} and D. Smirnov and Vasilyev, \{Yu B.\} and Greshnov, \{A. A.\} and Haug, \{Rolf J.\}",

note = "Funding information: G.Yu. Vasilyeva performed the experimental measurements with the support of the Russian Scientific Foundation, project no. 17-72-10134.",

year = "2019",

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AU - Vasilyeva, G. Yu

AU - Smirnov, D.

AU - Vasilyev, Yu B.

AU - Greshnov, A. A.

AU - Haug, Rolf J.

N1 - Funding information: G.Yu. Vasilyeva performed the experimental measurements with the support of the Russian Scientific Foundation, project no. 17-72-10134.

PY - 2019/12/1

Y1 - 2019/12/1

N2 - The conductivity of single layer and bilayer graphene ribbons 0.5–4 μm in width fabricated by oxygen plasma etching is studied experimentally. The dependence of the electron concentration in graphene on the ribbon width is revealed. This effect is explained by the edge doping of graphene due to defects arranged in SiO2 near the ribbon edges. The method of the formation of abrupt p–n junctions in graphene and structures with a constant electron concentration gradient in the graphene plane with the help of edge doping is proposed.

AB - The conductivity of single layer and bilayer graphene ribbons 0.5–4 μm in width fabricated by oxygen plasma etching is studied experimentally. The dependence of the electron concentration in graphene on the ribbon width is revealed. This effect is explained by the edge doping of graphene due to defects arranged in SiO2 near the ribbon edges. The method of the formation of abrupt p–n junctions in graphene and structures with a constant electron concentration gradient in the graphene plane with the help of edge doping is proposed.

KW - defects

KW - edge doping

KW - graphene

KW - plasma etching

KW - substrate

UR - https://www.scopus.com/pages/publications/85075943762

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DO - 10.1134/s1063782619160292

M3 - Article

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JF - Semiconductors

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