Effect of oxide structure on the Fermi-level pinning at metal/ Gd 2 O3 interfaces

E. Lipp; M. Eizenberg; M. Czernohorsky; H. J. Osten

doi:10.1063/1.3028071

Effect of oxide structure on the Fermi-level pinning at metal/ Gd ₂ O₃ interfaces

E. Lipp^*
, M. Eizenberg
, M. Czernohorsky
, H. J. Osten

^*Corresponding author for this work

Institute of Electronic Materials and Devices

Research output: Contribution to journal › Article › Research › peer review

Abstract

The extent of Fermi-level pinning at metal/ Gd₂ O₃ interfaces is studied as a function of oxide structure by comparing the flatband voltage of Ta- and Pt-gated capacitors. The flatband voltage shift between the two metals, which equals the difference in effective work functions, was found to be largest when the oxide is single crystalline (1.30±0.05 V), while lower values are measured when the oxide is domain structured (1.05±0.05 V) or amorphous (0.80±0.05 V). These results indicate that long-range ordering has a dominant effect on Fermi-level pinning at metal/high- k interfaces.

Original language	English
Article number	193513
Journal	Applied physics letters
Volume	93
Issue number	19
DOIs	https://doi.org/10.1063/1.3028071
Publication status	Published - 14 Nov 2008

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.3028071

Cite this

@article{2a3da4ca29bd43129986d7f92404a8e4,

title = "Effect of oxide structure on the Fermi-level pinning at metal/ Gd 2 O3 interfaces",

abstract = "The extent of Fermi-level pinning at metal/ Gd2 O3 interfaces is studied as a function of oxide structure by comparing the flatband voltage of Ta- and Pt-gated capacitors. The flatband voltage shift between the two metals, which equals the difference in effective work functions, was found to be largest when the oxide is single crystalline (1.30±0.05 V), while lower values are measured when the oxide is domain structured (1.05±0.05 V) or amorphous (0.80±0.05 V). These results indicate that long-range ordering has a dominant effect on Fermi-level pinning at metal/high- k interfaces.",

author = "E. Lipp and M. Eizenberg and M. Czernohorsky and Osten, \{H. J.\}",

note = "Funding Information: This work was supported by a grant from the German-Israel Foundation for Scientific Research and Development and by the Russell Berrie Nanotechnology Institute at the Technion. Part of this work was supported by the German Federal Ministry of Education and Research (BMBF) under the MEGAEPOS project. One of the authors (E.L.) acknowledges the support of the Israel Ministry of Science Eshkol grant.",

year = "2008",

month = nov,

day = "14",

doi = "10.1063/1.3028071",

language = "English",

volume = "93",

journal = "Applied physics letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "19",

}

TY - JOUR

T1 - Effect of oxide structure on the Fermi-level pinning at metal/ Gd 2 O3 interfaces

AU - Lipp, E.

AU - Eizenberg, M.

AU - Czernohorsky, M.

AU - Osten, H. J.

N1 - Funding Information: This work was supported by a grant from the German-Israel Foundation for Scientific Research and Development and by the Russell Berrie Nanotechnology Institute at the Technion. Part of this work was supported by the German Federal Ministry of Education and Research (BMBF) under the MEGAEPOS project. One of the authors (E.L.) acknowledges the support of the Israel Ministry of Science Eshkol grant.

PY - 2008/11/14

Y1 - 2008/11/14

N2 - The extent of Fermi-level pinning at metal/ Gd2 O3 interfaces is studied as a function of oxide structure by comparing the flatband voltage of Ta- and Pt-gated capacitors. The flatband voltage shift between the two metals, which equals the difference in effective work functions, was found to be largest when the oxide is single crystalline (1.30±0.05 V), while lower values are measured when the oxide is domain structured (1.05±0.05 V) or amorphous (0.80±0.05 V). These results indicate that long-range ordering has a dominant effect on Fermi-level pinning at metal/high- k interfaces.

AB - The extent of Fermi-level pinning at metal/ Gd2 O3 interfaces is studied as a function of oxide structure by comparing the flatband voltage of Ta- and Pt-gated capacitors. The flatband voltage shift between the two metals, which equals the difference in effective work functions, was found to be largest when the oxide is single crystalline (1.30±0.05 V), while lower values are measured when the oxide is domain structured (1.05±0.05 V) or amorphous (0.80±0.05 V). These results indicate that long-range ordering has a dominant effect on Fermi-level pinning at metal/high- k interfaces.

UR - https://www.scopus.com/pages/publications/56249139692

U2 - 10.1063/1.3028071

DO - 10.1063/1.3028071

M3 - Article

AN - SCOPUS:56249139692

SN - 0003-6951

VL - 93

JO - Applied physics letters

JF - Applied physics letters

IS - 19

M1 - 193513