Electrical and structural analysis of crystal defects after high-temperature rapid thermal annealing of highly boron ion-implanted emitters

Jan Krugener; Robby Peibst; Wolf Alexander; Eberhard Bugiel; Tobias Ohrdes; Fabian Kiefer; Claus Schollhorn; Andreas Grohe; Rolf Brendel; Hans-Jörg Osten

doi:10.1109/jphotov.2014.2365468

Electrical and structural analysis of crystal defects after high-temperature rapid thermal annealing of highly boron ion-implanted emitters

Jan Krugener, Robby Peibst, Wolf Alexander, Eberhard Bugiel, Tobias Ohrdes, Fabian Kiefer, Claus Schollhorn, Andreas Grohe, Rolf Brendel, Hans-Jörg Osten

Research output: Contribution to journal › Article › Research › peer review

Abstract

Ion implantation of boron is a promising technique for the preparation of p-type emitters in n-type cells. We use rapid thermal annealing with temperatures up to 1250 °C and annealing durations between 6 s and 20 min to anneal the implant-induced crystal defects. Experimental J-{0e} is compared with simulated and measured defect densities. Perfect dislocation loops are identified to be the dominating defect species after rapid thermal annealing (RTA) above 1000 °C. Even for emitters with J-{0e} values around 40 fA/cm₂, defects are present within the valleys of the textured surfaces after annealing. On textured Al₂O₃-passivated boron emitters, we measure J-{0e} of 38 fA/cm ₂ for a sheet resistance around 80 Ω/□ after very short annealing processes (1 min at 1200 °C).

Original language	English
Article number	6970768
Pages (from-to)	166-173
Number of pages	8
Journal	IEEE journal of photovoltaics
Volume	5
Issue number	1
DOIs	https://doi.org/10.1109/jphotov.2014.2365468
Publication status	Published - 1 Jan 2015

UN Sustainable Development Goals (SDGs)

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Keywords

Boron
crystal defects
ion implantation
photovoltaic
rapid thermal annealing (RTA)
Silicon

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1109/jphotov.2014.2365468

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Krugener, J., Peibst, R., Alexander, W., Bugiel, E., Ohrdes, T., Kiefer, F., Schollhorn, C., Grohe, A., Brendel, R., & Osten, H.-J. (2015). Electrical and structural analysis of crystal defects after high-temperature rapid thermal annealing of highly boron ion-implanted emitters. IEEE journal of photovoltaics, 5(1), 166-173. Article 6970768. https://doi.org/10.1109/jphotov.2014.2365468

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title = "Electrical and structural analysis of crystal defects after high-temperature rapid thermal annealing of highly boron ion-implanted emitters",

abstract = "Ion implantation of boron is a promising technique for the preparation of p-type emitters in n-type cells. We use rapid thermal annealing with temperatures up to 1250 °C and annealing durations between 6 s and 20 min to anneal the implant-induced crystal defects. Experimental J-{0e} is compared with simulated and measured defect densities. Perfect dislocation loops are identified to be the dominating defect species after rapid thermal annealing (RTA) above 1000 °C. Even for emitters with J-{0e} values around 40 fA/cm2, defects are present within the valleys of the textured surfaces after annealing. On textured Al2O3-passivated boron emitters, we measure J-{0e} of 38 fA/cm 2 for a sheet resistance around 80 Ω/□ after very short annealing processes (1 min at 1200 °C).",

keywords = "Boron, crystal defects, ion implantation, photovoltaic, rapid thermal annealing (RTA), Silicon",

author = "Jan Krugener and Robby Peibst and Wolf Alexander and Eberhard Bugiel and Tobias Ohrdes and Fabian Kiefer and Claus Schollhorn and Andreas Grohe and Rolf Brendel and Hans-J{\"o}rg Osten",

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doi = "10.1109/jphotov.2014.2365468",

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Krugener, J, Peibst, R, Alexander, W, Bugiel, E, Ohrdes, T, Kiefer, F, Schollhorn, C, Grohe, A, Brendel, R & Osten, H-J 2015, 'Electrical and structural analysis of crystal defects after high-temperature rapid thermal annealing of highly boron ion-implanted emitters', IEEE journal of photovoltaics, vol. 5, no. 1, 6970768, pp. 166-173. https://doi.org/10.1109/jphotov.2014.2365468

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T1 - Electrical and structural analysis of crystal defects after high-temperature rapid thermal annealing of highly boron ion-implanted emitters

AU - Krugener, Jan

AU - Peibst, Robby

AU - Alexander, Wolf

AU - Bugiel, Eberhard

AU - Ohrdes, Tobias

AU - Kiefer, Fabian

AU - Schollhorn, Claus

AU - Grohe, Andreas

AU - Brendel, Rolf

AU - Osten, Hans-Jörg

PY - 2015/1/1

Y1 - 2015/1/1

N2 - Ion implantation of boron is a promising technique for the preparation of p-type emitters in n-type cells. We use rapid thermal annealing with temperatures up to 1250 °C and annealing durations between 6 s and 20 min to anneal the implant-induced crystal defects. Experimental J-{0e} is compared with simulated and measured defect densities. Perfect dislocation loops are identified to be the dominating defect species after rapid thermal annealing (RTA) above 1000 °C. Even for emitters with J-{0e} values around 40 fA/cm2, defects are present within the valleys of the textured surfaces after annealing. On textured Al2O3-passivated boron emitters, we measure J-{0e} of 38 fA/cm 2 for a sheet resistance around 80 Ω/□ after very short annealing processes (1 min at 1200 °C).

AB - Ion implantation of boron is a promising technique for the preparation of p-type emitters in n-type cells. We use rapid thermal annealing with temperatures up to 1250 °C and annealing durations between 6 s and 20 min to anneal the implant-induced crystal defects. Experimental J-{0e} is compared with simulated and measured defect densities. Perfect dislocation loops are identified to be the dominating defect species after rapid thermal annealing (RTA) above 1000 °C. Even for emitters with J-{0e} values around 40 fA/cm2, defects are present within the valleys of the textured surfaces after annealing. On textured Al2O3-passivated boron emitters, we measure J-{0e} of 38 fA/cm 2 for a sheet resistance around 80 Ω/□ after very short annealing processes (1 min at 1200 °C).

KW - Boron

KW - crystal defects

KW - ion implantation

KW - photovoltaic

KW - rapid thermal annealing (RTA)

KW - Silicon

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Electrical and structural analysis of crystal defects after high-temperature rapid thermal annealing of highly boron ion-implanted emitters

Abstract

UN Sustainable Development Goals (SDGs)

Keywords

ASJC Scopus subject areas

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