Evolution of oxide disruptions: The (W)hole story about poly-Si / c-Si passivating contacts

Dominic Tetzlaff; Jan Krugener; Yevgeniya Larionova; Sina Reiter; Mircea Turcu; Robby Peibst; Uwe Hohne; Jan Dirk Kahler; Tobias Wietler

doi:10.1109/pvsc.2017.8366522

Evolution of oxide disruptions: The (W)hole story about poly-Si / c-Si passivating contacts

Dominic Tetzlaff, Jan Krugener, Yevgeniya Larionova, Sina Reiter, Mircea Turcu, Robby Peibst, Uwe Hohne, Jan Dirk Kahler, Tobias Wietler

Research output: Chapter in book/report/conference proceeding › Conference contribution › Research › peer review

Abstract

Different models exist describing the current transport in polycrystalline Si/SiO _x /crystalline Si junctions. Besides tunneling through thin oxides, transport through pinholes is discussed. We investigate the influence of annealing temperature on the structural properties of polycrystalline Si/SiO _x /crystalline Si interfaces and analyze the formation and evolution of holes by high resolution transmission electron microscopy in comparison to electrical results. We prove the existence of pinholes in samples with good electrical properties in agreement with the pinhole model.

Original language	English
Title of host publication	2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	963-965
Number of pages	3
ISBN (Electronic)	9781509056057
DOIs	https://doi.org/10.1109/pvsc.2017.8366522
Publication status	Published - 2017
Event	44th IEEE Photovoltaic Specialist Conference, PVSC 2017 - Washington, United States Duration: 25 Jun 2017 → 30 Jun 2017

Conference

Conference	44th IEEE Photovoltaic Specialist Conference, PVSC 2017
Country/Territory	United States
City	Washington
Period	25 Jun 2017 → 30 Jun 2017

UN Sustainable Development Goals (SDGs)

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Keywords

Junction formation
Passivating contacts
Pinholes
Polysilicon
Silicon
Silicon oxide

ASJC Scopus subject areas

Renewable Energy, Sustainability and the Environment
Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

Access to Document

10.1109/pvsc.2017.8366522

Cite this

Tetzlaff, D., Krugener, J., Larionova, Y., Reiter, S., Turcu, M., Peibst, R., Hohne, U., Kahler, J. D., & Wietler, T. (2017). Evolution of oxide disruptions: The (W)hole story about poly-Si / c-Si passivating contacts. In 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017 (pp. 963-965). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/pvsc.2017.8366522

@inproceedings{e06bb7becac24892830f4aef80720e5b,

title = "Evolution of oxide disruptions: The (W)hole story about poly-Si / c-Si passivating contacts",

abstract = " Different models exist describing the current transport in polycrystalline Si/SiO x /crystalline Si junctions. Besides tunneling through thin oxides, transport through pinholes is discussed. We investigate the influence of annealing temperature on the structural properties of polycrystalline Si/SiO x /crystalline Si interfaces and analyze the formation and evolution of holes by high resolution transmission electron microscopy in comparison to electrical results. We prove the existence of pinholes in samples with good electrical properties in agreement with the pinhole model. ",

keywords = "Junction formation, Passivating contacts, Pinholes, Polysilicon, Silicon, Silicon oxide",

author = "Dominic Tetzlaff and Jan Krugener and Yevgeniya Larionova and Sina Reiter and Mircea Turcu and Robby Peibst and Uwe Hohne and Kahler, {Jan Dirk} and Tobias Wietler",

note = "Funding information: This work was supported by the German Federal Ministry for Economic Affairs and Energy (BMWi) under contract no. 0325702B.; 44th IEEE Photovoltaic Specialist Conference, PVSC 2017 ; Conference date: 25-06-2017 Through 30-06-2017",

year = "2017",

doi = "10.1109/pvsc.2017.8366522",

language = "English",

pages = "963--965",

booktitle = "2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

address = "United States",

}

Tetzlaff, D, Krugener, J, Larionova, Y, Reiter, S, Turcu, M, Peibst, R, Hohne, U, Kahler, JD & Wietler, T 2017, Evolution of oxide disruptions: The (W)hole story about poly-Si / c-Si passivating contacts. in 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017. Institute of Electrical and Electronics Engineers Inc., pp. 963-965, 44th IEEE Photovoltaic Specialist Conference, PVSC 2017, Washington, United States, 25 Jun 2017. https://doi.org/10.1109/pvsc.2017.8366522

Evolution of oxide disruptions: The (W)hole story about poly-Si / c-Si passivating contacts. / Tetzlaff, Dominic; Krugener, Jan; Larionova, Yevgeniya et al.
2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017. Institute of Electrical and Electronics Engineers Inc., 2017. p. 963-965.

Research output: Chapter in book/report/conference proceeding › Conference contribution › Research › peer review

TY - GEN

T1 - Evolution of oxide disruptions

T2 - 44th IEEE Photovoltaic Specialist Conference, PVSC 2017

AU - Tetzlaff, Dominic

AU - Krugener, Jan

AU - Larionova, Yevgeniya

AU - Reiter, Sina

AU - Turcu, Mircea

AU - Peibst, Robby

AU - Hohne, Uwe

AU - Kahler, Jan Dirk

AU - Wietler, Tobias

N1 - Funding information: This work was supported by the German Federal Ministry for Economic Affairs and Energy (BMWi) under contract no. 0325702B.

PY - 2017

Y1 - 2017

N2 - Different models exist describing the current transport in polycrystalline Si/SiO x /crystalline Si junctions. Besides tunneling through thin oxides, transport through pinholes is discussed. We investigate the influence of annealing temperature on the structural properties of polycrystalline Si/SiO x /crystalline Si interfaces and analyze the formation and evolution of holes by high resolution transmission electron microscopy in comparison to electrical results. We prove the existence of pinholes in samples with good electrical properties in agreement with the pinhole model.

AB - Different models exist describing the current transport in polycrystalline Si/SiO x /crystalline Si junctions. Besides tunneling through thin oxides, transport through pinholes is discussed. We investigate the influence of annealing temperature on the structural properties of polycrystalline Si/SiO x /crystalline Si interfaces and analyze the formation and evolution of holes by high resolution transmission electron microscopy in comparison to electrical results. We prove the existence of pinholes in samples with good electrical properties in agreement with the pinhole model.

KW - Junction formation

KW - Passivating contacts

KW - Pinholes

KW - Polysilicon

KW - Silicon

KW - Silicon oxide

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U2 - 10.1109/pvsc.2017.8366522

DO - 10.1109/pvsc.2017.8366522

M3 - Conference contribution

AN - SCOPUS:85048510383

SP - 963

EP - 965

BT - 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017

PB - Institute of Electrical and Electronics Engineers Inc.

Y2 - 25 June 2017 through 30 June 2017

ER -

Evolution of oxide disruptions: The (W)hole story about poly-Si / c-Si passivating contacts

Abstract

Conference

UN Sustainable Development Goals (SDGs)

Keywords

ASJC Scopus subject areas

Access to Document

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Cite this