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High frequency conductance of a quantum point contact

  • J. Regul
  • , F. Hohls*
  • , D. Reuter
  • , A. D. Wieck
  • , R. J. Haug
  • *Corresponding author for this work

Research output: Contribution to journalConference articleResearchpeer review

Abstract

We present an experimental study of the AC conductance GAC of an atomic force microscope engraved quantum point contact at high frequency f=160 MHz. In agreement with theoretical predictions the real part R(GAC) is unchanged from the DC-conductance GDC. The imaginary part I(G AC) changes for every addition of a new conductance channel.

Original languageEnglish
Pages (from-to)272-275
Number of pages4
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Volume22
Issue number1-3
DOIs
Publication statusPublished - 7 Feb 2004
Event15th International Conference on ELectronic Propreties - Nara, Japan
Duration: 14 Jul 200318 Jul 2003

Keywords

  • AFM lithography
  • High frequency conductance
  • Quantum point contact

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

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