Impact of surface phase coexistence on the development of step-free areas on Si(111)

Andreas Fissel; Ayan Roy Chaudhuri; Jan Krügener; Philipp Gribisch; H. Jörg Osten

doi:10.1007/s11706-015-0282-z

Impact of surface phase coexistence on the development of step-free areas on Si(111)

Andreas Fissel^*
, Ayan Roy Chaudhuri
, Jan Krügener
, Philipp Gribisch
, H. Jörg Osten

^*Corresponding author for this work

Institute of Electronic Materials and Devices

Research output: Contribution to journal › Article › Research › peer review

Abstract

The step-flow growth condition of Si on Si(111) near the (7×7)-“1×1” surface phase transition temperature T_C are analyzed within the framework of Burton-Cabrera-Frank theory. In particular, coexistence of both surface phases well below T_C and their specific influence on the step-flow growth behavior are considered. We presume that under dynamical condition of growth, the surface initially covered by only the (7×7) phase separates into domains surrounded by “1×1” areas. On such a surface, the overall supersaturation should be reduced drastically compared to a surface with only (7×7), resulting in much larger critical terrace width for nucleation.

Original language	English
Pages (from-to)	141-146
Number of pages	6
Journal	Frontiers of materials science
Volume	9
Issue number	2
DOIs	https://doi.org/10.1007/s11706-015-0282-z
Publication status	Published - 26 Jun 2015

Keywords

molecular beam epitaxy
silicon
step-flow growth mode
surface superstructure

ASJC Scopus subject areas

General Materials Science

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10.1007/s11706-015-0282-z

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title = "Impact of surface phase coexistence on the development of step-free areas on Si(111)",

abstract = "The step-flow growth condition of Si on Si(111) near the (7×7)-“1×1” surface phase transition temperature TC are analyzed within the framework of Burton-Cabrera-Frank theory. In particular, coexistence of both surface phases well below TC and their specific influence on the step-flow growth behavior are considered. We presume that under dynamical condition of growth, the surface initially covered by only the (7×7) phase separates into domains surrounded by “1×1” areas. On such a surface, the overall supersaturation should be reduced drastically compared to a surface with only (7×7), resulting in much larger critical terrace width for nucleation.",

keywords = "molecular beam epitaxy, silicon, step-flow growth mode, surface superstructure",

author = "Andreas Fissel and Chaudhuri, \{Ayan Roy\} and Jan Kr{\"u}gener and Philipp Gribisch and Osten, \{H. J{\"o}rg\}",

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T1 - Impact of surface phase coexistence on the development of step-free areas on Si(111)

AU - Fissel, Andreas

AU - Chaudhuri, Ayan Roy

AU - Krügener, Jan

AU - Gribisch, Philipp

AU - Osten, H. Jörg

PY - 2015/6/26

Y1 - 2015/6/26

N2 - The step-flow growth condition of Si on Si(111) near the (7×7)-“1×1” surface phase transition temperature TC are analyzed within the framework of Burton-Cabrera-Frank theory. In particular, coexistence of both surface phases well below TC and their specific influence on the step-flow growth behavior are considered. We presume that under dynamical condition of growth, the surface initially covered by only the (7×7) phase separates into domains surrounded by “1×1” areas. On such a surface, the overall supersaturation should be reduced drastically compared to a surface with only (7×7), resulting in much larger critical terrace width for nucleation.

AB - The step-flow growth condition of Si on Si(111) near the (7×7)-“1×1” surface phase transition temperature TC are analyzed within the framework of Burton-Cabrera-Frank theory. In particular, coexistence of both surface phases well below TC and their specific influence on the step-flow growth behavior are considered. We presume that under dynamical condition of growth, the surface initially covered by only the (7×7) phase separates into domains surrounded by “1×1” areas. On such a surface, the overall supersaturation should be reduced drastically compared to a surface with only (7×7), resulting in much larger critical terrace width for nucleation.

KW - molecular beam epitaxy

KW - silicon

KW - step-flow growth mode

KW - surface superstructure

UR - https://www.scopus.com/pages/publications/84929842049

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AN - SCOPUS:84929842049

SN - 2095-025X

VL - 9

SP - 141

EP - 146

JO - Frontiers of materials science

JF - Frontiers of materials science

IS - 2

ER -

Impact of surface phase coexistence on the development of step-free areas on Si(111)

Abstract

Keywords

ASJC Scopus subject areas

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