Influence of scattering processes on the electronic properties of composite fermions

I. V. Kukushkin; R. J. Haug; K. Von Klitzing; K. Eberl

doi:10.1016/0039-6028(96)00340-8

Influence of scattering processes on the electronic properties of composite fermions

I. V. Kukushkin^*, R. J. Haug, K. Von Klitzing, K. Eberl

^*Corresponding author for this work

Max Planck Institute for Solid State Research (MPI-FKF)

Research output: Contribution to journal › Article › Research › peer review

Abstract

Sweeping the magnetic field at low temperatures can result in metastable states of the system of two-dimensional electrons in GaAs/AlGaAs. These non-equilibrium states are stable in the range of filling factors 1/3<ν<1, but can be changed by an extremely small variation of magnetic field around ν=1. We used this phenomenon to vary the disorder and to study its influence on the electronic properties of two-dimensional electrons in the vicinity of ν=1/2. The temperature dependence of σ_xx at ν=1/2 was analyzed, and logarithmic corrections to conductivity were found.

Original language	English
Pages (from-to)	99-101
Number of pages	3
Journal	Surface science
Volume	361-362
DOIs	https://doi.org/10.1016/0039-6028(96)00340-8
Publication status	Published - 20 Jul 1996
Externally published	Yes

Keywords

Conductivity
Gallium arsenide
Heterojunctions
Magnetic phenomena
Many body and quasi-particle theories
Molecular beam epitaxy
Semiconductor-semiconductor heterostructures

ASJC Scopus subject areas

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Materials Chemistry

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10.1016/0039-6028(96)00340-8

Cite this

@article{d0bcb70e18b14f86a931eb4904f8d89a,

title = "Influence of scattering processes on the electronic properties of composite fermions",

abstract = "Sweeping the magnetic field at low temperatures can result in metastable states of the system of two-dimensional electrons in GaAs/AlGaAs. These non-equilibrium states are stable in the range of filling factors 1/3<ν<1, but can be changed by an extremely small variation of magnetic field around ν=1. We used this phenomenon to vary the disorder and to study its influence on the electronic properties of two-dimensional electrons in the vicinity of ν=1/2. The temperature dependence of σxx at ν=1/2 was analyzed, and logarithmic corrections to conductivity were found.",

keywords = "Conductivity, Gallium arsenide, Heterojunctions, Magnetic phenomena, Many body and quasi-particle theories, Molecular beam epitaxy, Semiconductor-semiconductor heterostructures",

author = "Kukushkin, {I. V.} and Haug, {R. J.} and {Von Klitzing}, K. and K. Eberl",

year = "1996",

month = jul,

day = "20",

doi = "10.1016/0039-6028(96)00340-8",

language = "English",

volume = "361-362",

pages = "99--101",

journal = "Surface science",

issn = "0039-6028",

publisher = "Elsevier BV",

}

TY - JOUR

T1 - Influence of scattering processes on the electronic properties of composite fermions

AU - Kukushkin, I. V.

AU - Haug, R. J.

AU - Von Klitzing, K.

AU - Eberl, K.

PY - 1996/7/20

Y1 - 1996/7/20

N2 - Sweeping the magnetic field at low temperatures can result in metastable states of the system of two-dimensional electrons in GaAs/AlGaAs. These non-equilibrium states are stable in the range of filling factors 1/3<ν<1, but can be changed by an extremely small variation of magnetic field around ν=1. We used this phenomenon to vary the disorder and to study its influence on the electronic properties of two-dimensional electrons in the vicinity of ν=1/2. The temperature dependence of σxx at ν=1/2 was analyzed, and logarithmic corrections to conductivity were found.

AB - Sweeping the magnetic field at low temperatures can result in metastable states of the system of two-dimensional electrons in GaAs/AlGaAs. These non-equilibrium states are stable in the range of filling factors 1/3<ν<1, but can be changed by an extremely small variation of magnetic field around ν=1. We used this phenomenon to vary the disorder and to study its influence on the electronic properties of two-dimensional electrons in the vicinity of ν=1/2. The temperature dependence of σxx at ν=1/2 was analyzed, and logarithmic corrections to conductivity were found.

KW - Conductivity

KW - Gallium arsenide

KW - Heterojunctions

KW - Magnetic phenomena

KW - Many body and quasi-particle theories

KW - Molecular beam epitaxy

KW - Semiconductor-semiconductor heterostructures

UR - http://www.scopus.com/inward/record.url?scp=0030189510&partnerID=8YFLogxK

U2 - 10.1016/0039-6028(96)00340-8

DO - 10.1016/0039-6028(96)00340-8

M3 - Article

AN - SCOPUS:0030189510

SN - 0039-6028

VL - 361-362

SP - 99

EP - 101

JO - Surface science

JF - Surface science

ER -

Influence of scattering processes on the electronic properties of composite fermions

Abstract

Keywords

ASJC Scopus subject areas

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