Laser structuring for back junction silicon solar cells

Peter Engelhart; Nils Peter Harder; Rainer Grischke; Agnes Merkle; Rüdiger Meyer; Rolf Brendel

doi:10.1002/pip.732

Laser structuring for back junction silicon solar cells

Peter Engelhart^*, Nils Peter Harder, Rainer Grischke, Agnes Merkle, Rüdiger Meyer, Rolf Brendel

^*Corresponding author for this work

Institute for Solar Energy Research (ISFH)

Research output: Contribution to journal › Article › Research › peer review

Abstract

We demonstrate mask-free fabrication of a 22.0%-efficient crystalline Si solar cell by applying laser ablation of Si and by laser ablation of protective coatings. The bulk absorber material is a p-type float zone silicon wafer and the designated cell area is 4 cm². While the processing time of our laboratory-type of laser system is far too slow for industrial processing, we estimate on the basis of our experiments that laser processing of 12.5 × 12.5 cm²-sized solar cells in just a few seconds is feasible with commercially available equipment.

Original language	English
Pages (from-to)	237-243
Number of pages	7
Journal	Progress in Photovoltaics: Research and Applications
Volume	15
Issue number	3
Early online date	5 Oct 2006
DOIs	https://doi.org/10.1002/pip.732
Publication status	Published - May 2007
Externally published	Yes

UN Sustainable Development Goals (SDGs)

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Keywords

Back contact
Back junction
High efficiency
Laser technology
Rear interdigitated
RISE
Silicon solar cells

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Renewable Energy, Sustainability and the Environment
Condensed Matter Physics
Electrical and Electronic Engineering

Access to Document

10.1002/pip.732

Cite this

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title = "Laser structuring for back junction silicon solar cells",

abstract = "We demonstrate mask-free fabrication of a 22.0%-efficient crystalline Si solar cell by applying laser ablation of Si and by laser ablation of protective coatings. The bulk absorber material is a p-type float zone silicon wafer and the designated cell area is 4 cm2. While the processing time of our laboratory-type of laser system is far too slow for industrial processing, we estimate on the basis of our experiments that laser processing of 12.5 × 12.5 cm2-sized solar cells in just a few seconds is feasible with commercially available equipment.",

keywords = "Back contact, Back junction, High efficiency, Laser technology, Rear interdigitated, RISE, Silicon solar cells",

author = "Peter Engelhart and Harder, {Nils Peter} and Rainer Grischke and Agnes Merkle and R{\"u}diger Meyer and Rolf Brendel",

note = "Funding Information: The financial support by the State of Lower Saxony and the German FederalGovernment is gratefully acknowledged. The ISFH is a member of the Forschungsverbund Sonnenenergie.",

year = "2007",

month = may,

doi = "10.1002/pip.732",

language = "English",

volume = "15",

pages = "237--243",

journal = "Progress in Photovoltaics: Research and Applications",

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T1 - Laser structuring for back junction silicon solar cells

AU - Engelhart, Peter

AU - Harder, Nils Peter

AU - Grischke, Rainer

AU - Merkle, Agnes

AU - Meyer, Rüdiger

AU - Brendel, Rolf

N1 - Funding Information: The financial support by the State of Lower Saxony and the German FederalGovernment is gratefully acknowledged. The ISFH is a member of the Forschungsverbund Sonnenenergie.

PY - 2007/5

Y1 - 2007/5

N2 - We demonstrate mask-free fabrication of a 22.0%-efficient crystalline Si solar cell by applying laser ablation of Si and by laser ablation of protective coatings. The bulk absorber material is a p-type float zone silicon wafer and the designated cell area is 4 cm2. While the processing time of our laboratory-type of laser system is far too slow for industrial processing, we estimate on the basis of our experiments that laser processing of 12.5 × 12.5 cm2-sized solar cells in just a few seconds is feasible with commercially available equipment.

AB - We demonstrate mask-free fabrication of a 22.0%-efficient crystalline Si solar cell by applying laser ablation of Si and by laser ablation of protective coatings. The bulk absorber material is a p-type float zone silicon wafer and the designated cell area is 4 cm2. While the processing time of our laboratory-type of laser system is far too slow for industrial processing, we estimate on the basis of our experiments that laser processing of 12.5 × 12.5 cm2-sized solar cells in just a few seconds is feasible with commercially available equipment.

KW - Back contact

KW - Back junction

KW - High efficiency

KW - Laser technology

KW - Rear interdigitated

KW - RISE

KW - Silicon solar cells

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M3 - Article

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JO - Progress in Photovoltaics: Research and Applications

JF - Progress in Photovoltaics: Research and Applications

IS - 3

ER -

Laser structuring for back junction silicon solar cells

Abstract

UN Sustainable Development Goals (SDGs)

Keywords

ASJC Scopus subject areas

Access to Document

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