Magnetoresistance anisotropy in Si/SiGe in tilted magnetic fields: Experimental evidence for a stripe-phase formation

U. Zeitler; H. W. Schumacher; A. G.M. Jansen; R. J. Haug

doi:10.1103/PhysRevLett.86.866

Magnetoresistance anisotropy in Si/SiGe in tilted magnetic fields: Experimental evidence for a stripe-phase formation

U. Zeitler^*
, H. W. Schumacher
, A. G.M. Jansen
, R. J. Haug

^*Corresponding author for this work

Institute of Solid State Physics

Research output: Contribution to journal › Article › Research › peer review

Abstract

The anisotropies induced by an in-plane field in the magnetotransport properties of coinciding Landau levels in the two dimensional electron system of a silicon/silicon germanium (Si/SiGe) heterostructure were investigated. The anisotropies were caused by the formation of a unidirectional stripe phase from two Landau levels with opposite spin of electrons.

Original language	English
Pages (from-to)	866-869
Number of pages	4
Journal	Physical review letters
Volume	86
Issue number	5
DOIs	https://doi.org/10.1103/PhysRevLett.86.866
Publication status	Published - 29 Jan 2001

ASJC Scopus subject areas

General Physics and Astronomy

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10.1103/PhysRevLett.86.866

Cite this

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title = "Magnetoresistance anisotropy in Si/SiGe in tilted magnetic fields: Experimental evidence for a stripe-phase formation",

abstract = "The anisotropies induced by an in-plane field in the magnetotransport properties of coinciding Landau levels in the two dimensional electron system of a silicon/silicon germanium (Si/SiGe) heterostructure were investigated. The anisotropies were caused by the formation of a unidirectional stripe phase from two Landau levels with opposite spin of electrons.",

author = "U. Zeitler and Schumacher, \{H. W.\} and Jansen, \{A. G.M.\} and Haug, \{R. J.\}",

year = "2001",

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doi = "10.1103/PhysRevLett.86.866",

language = "English",

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journal = "Physical review letters",

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T2 - Experimental evidence for a stripe-phase formation

AU - Zeitler, U.

AU - Schumacher, H. W.

AU - Jansen, A. G.M.

AU - Haug, R. J.

PY - 2001/1/29

Y1 - 2001/1/29

N2 - The anisotropies induced by an in-plane field in the magnetotransport properties of coinciding Landau levels in the two dimensional electron system of a silicon/silicon germanium (Si/SiGe) heterostructure were investigated. The anisotropies were caused by the formation of a unidirectional stripe phase from two Landau levels with opposite spin of electrons.

AB - The anisotropies induced by an in-plane field in the magnetotransport properties of coinciding Landau levels in the two dimensional electron system of a silicon/silicon germanium (Si/SiGe) heterostructure were investigated. The anisotropies were caused by the formation of a unidirectional stripe phase from two Landau levels with opposite spin of electrons.

UR - https://www.scopus.com/pages/publications/0035138420

U2 - 10.1103/PhysRevLett.86.866

DO - 10.1103/PhysRevLett.86.866

M3 - Article

AN - SCOPUS:0035138420

SN - 0031-9007

VL - 86

SP - 866

EP - 869

JO - Physical review letters

JF - Physical review letters

IS - 5

ER -

Magnetoresistance anisotropy in Si/SiGe in tilted magnetic fields: Experimental evidence for a stripe-phase formation

Abstract

ASJC Scopus subject areas

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