Abstract
Kerf-free techniques for subdividing a single thick crystalline Si wafer into a multitude of thin Si layers have a large potential for cost reductions. In this paper, we explore pore formation in Si for separating many 18 μm-thick surface-textured layers from a thick wafer with a single etching process. We demonstrate the fabrication and separation of four macroporous Si layers in a single etching step. Generating many instead of single macroporous layers per etching step improves the economics of the macroporous Si process. We present our etching process that maintains the pore pattern defined by photolithography even after etching many absorber and separation layers.
| Original language | English |
|---|---|
| Pages (from-to) | 933-941 |
| Number of pages | 9 |
| Journal | Energy Procedia |
| Volume | 38 |
| E-pub ahead of print | 5 Sept 2013 |
| DOIs | |
| Publication status | Published - 2013 |
| Event | 3rd International Conference on Crystalline Silicon Photovoltaics, SiliconPV 2013 - Hamelin, Germany Duration: 25 Mar 2013 → 27 Mar 2013 |
Keywords
- Kerf-free
- Layer transfer
- Macroporous silicon
- Thin films
ASJC Scopus subject areas
- General Energy
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