Near- and mid-infrared spectroscopy of InGaAs/GaAs quantum dot structures

V. A. Shalygin; L. E. Vorobjev; A. Glukhovskoy; S. N. Danilov; V. Yu Panevin; D. A. Firsov; B. V. Volovik; N. N. Ledentsov; D. A. Livshits; V. M. Ustinov; Yu M. Shernyakov; A. F. Tsatsul'nikov; A. Weber; M. Grundmann

doi:10.1088/0957-4484/12/4/312

Near- and mid-infrared spectroscopy of InGaAs/GaAs quantum dot structures

V. A. Shalygin^*
, L. E. Vorobjev
, A. Glukhovskoy
, S. N. Danilov
, V. Yu Panevin
, D. A. Firsov
, B. V. Volovik
, N. N. Ledentsov
, D. A. Livshits
, V. M. Ustinov
, Yu M. Shernyakov
, A. F. Tsatsul'nikov
, A. Weber
, M. Grundmann

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › Research › peer review

Abstract

Results of a photoluminescence and electroluminescence study of vertically coupled In_0.5Ga_0.5As/GaAs quantum dot (QD) structures with an extended waveguide (1.24 μm thick) are presented. Spectra of spontaneous and stimulated near-infrared (λ ≃ 1 μ.m) emission as well as spectra of spontaneous mid-infrared (MIR) (λ ≃ 12 μm) emission are obtained under optical and electrical pumping. It is shown that the observed MIR emission is connected with intraband electron optical transitions in the QD structures.

Original language	English
Pages (from-to)	447-449
Number of pages	3
Journal	NANOTECHNOLOGY
Volume	12
Issue number	4
DOIs	https://doi.org/10.1088/0957-4484/12/4/312
Publication status	Published - Dec 2001
Externally published	Yes
Event	9th International Symposium on Nanostructures: Physics and Technology - St. Petersburg, Russian Federation Duration: 18 Jun 2001 → 22 Jun 2001

ASJC Scopus subject areas

Bioengineering
General Chemistry
General Materials Science
Mechanics of Materials
Mechanical Engineering
Electrical and Electronic Engineering

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10.1088/0957-4484/12/4/312

Cite this

Shalygin, V. A., Vorobjev, L. E., Glukhovskoy, A., Danilov, S. N., Panevin, V. Y., Firsov, D. A., Volovik, B. V., Ledentsov, N. N., Livshits, D. A., Ustinov, V. M., Shernyakov, Y. M., Tsatsul'nikov, A. F., Weber, A., & Grundmann, M. (2001). Near- and mid-infrared spectroscopy of InGaAs/GaAs quantum dot structures. NANOTECHNOLOGY, 12(4), 447-449. https://doi.org/10.1088/0957-4484/12/4/312

@article{dfd89b23882848fd92fe459fe4e07d78,

title = "Near- and mid-infrared spectroscopy of InGaAs/GaAs quantum dot structures",

abstract = "Results of a photoluminescence and electroluminescence study of vertically coupled In0.5Ga0.5As/GaAs quantum dot (QD) structures with an extended waveguide (1.24 μm thick) are presented. Spectra of spontaneous and stimulated near-infrared (λ ≃ 1 μ.m) emission as well as spectra of spontaneous mid-infrared (MIR) (λ ≃ 12 μm) emission are obtained under optical and electrical pumping. It is shown that the observed MIR emission is connected with intraband electron optical transitions in the QD structures.",

author = "Shalygin, \{V. A.\} and Vorobjev, \{L. E.\} and A. Glukhovskoy and Danilov, \{S. N.\} and Panevin, \{V. Yu\} and Firsov, \{D. A.\} and Volovik, \{B. V.\} and Ledentsov, \{N. N.\} and Livshits, \{D. A.\} and Ustinov, \{V. M.\} and Shernyakov, \{Yu M.\} and Tsatsul'nikov, \{A. F.\} and A. Weber and M. Grundmann",

year = "2001",

month = dec,

doi = "10.1088/0957-4484/12/4/312",

language = "English",

volume = "12",

pages = "447--449",

journal = "NANOTECHNOLOGY",

issn = "0957-4484",

publisher = "IOP Publishing Ltd.",

number = "4",

note = "9th International Symposium on Nanostructures: Physics and Technology ; Conference date: 18-06-2001 Through 22-06-2001",

}

TY - JOUR

T1 - Near- and mid-infrared spectroscopy of InGaAs/GaAs quantum dot structures

AU - Shalygin, V. A.

AU - Vorobjev, L. E.

AU - Glukhovskoy, A.

AU - Danilov, S. N.

AU - Panevin, V. Yu

AU - Firsov, D. A.

AU - Volovik, B. V.

AU - Ledentsov, N. N.

AU - Livshits, D. A.

AU - Ustinov, V. M.

AU - Shernyakov, Yu M.

AU - Tsatsul'nikov, A. F.

AU - Weber, A.

AU - Grundmann, M.

PY - 2001/12

Y1 - 2001/12

N2 - Results of a photoluminescence and electroluminescence study of vertically coupled In0.5Ga0.5As/GaAs quantum dot (QD) structures with an extended waveguide (1.24 μm thick) are presented. Spectra of spontaneous and stimulated near-infrared (λ ≃ 1 μ.m) emission as well as spectra of spontaneous mid-infrared (MIR) (λ ≃ 12 μm) emission are obtained under optical and electrical pumping. It is shown that the observed MIR emission is connected with intraband electron optical transitions in the QD structures.

AB - Results of a photoluminescence and electroluminescence study of vertically coupled In0.5Ga0.5As/GaAs quantum dot (QD) structures with an extended waveguide (1.24 μm thick) are presented. Spectra of spontaneous and stimulated near-infrared (λ ≃ 1 μ.m) emission as well as spectra of spontaneous mid-infrared (MIR) (λ ≃ 12 μm) emission are obtained under optical and electrical pumping. It is shown that the observed MIR emission is connected with intraband electron optical transitions in the QD structures.

UR - https://www.scopus.com/pages/publications/0035673626

U2 - 10.1088/0957-4484/12/4/312

DO - 10.1088/0957-4484/12/4/312

M3 - Conference article

AN - SCOPUS:0035673626

SN - 0957-4484

VL - 12

SP - 447

EP - 449

JO - NANOTECHNOLOGY

JF - NANOTECHNOLOGY

IS - 4

T2 - 9th International Symposium on Nanostructures: Physics and Technology

Y2 - 18 June 2001 through 22 June 2001

ER -

Near- and mid-infrared spectroscopy of InGaAs/GaAs quantum dot structures

Abstract

ASJC Scopus subject areas

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