TY - GEN
T1 - Relaxed germanium on porous silicon substrates
AU - Wietler, Tobias F.
AU - Rugeramigabo, Eddy P.
AU - Bugiel, Eberhard
AU - Rojas, Enrique Garralaga
PY - 2012/7/30
Y1 - 2012/7/30
N2 - In this paper we study the surfactant-mediated epitaxy (SME) of relaxed germanium films on (001)-orientated porous silicon wafers, which could be a first step towards a cost-efficient lift-off technique for lightweight high-efficiency multi-junction Ge/III-V solar cells. Transmission electron microscopy and high-resolution X-ray diffraction (XRD) investigations show full relaxation and high structural perfection of the epitaxial germanium. An abrupt interface showing no evidence for intermixing is formed between germanium and silicon. Similar to SME of germanium on standard Si(001) wafers the lattice mismatch is compensated by a periodic array of full edge dislocations parallel to the interface. XRD measurements indicate that part of the silicon is under a small tensile strain. We attribute this to partial strain accommodation in the top silicon layer of the porous substrate which acts as a compliant substrate.
AB - In this paper we study the surfactant-mediated epitaxy (SME) of relaxed germanium films on (001)-orientated porous silicon wafers, which could be a first step towards a cost-efficient lift-off technique for lightweight high-efficiency multi-junction Ge/III-V solar cells. Transmission electron microscopy and high-resolution X-ray diffraction (XRD) investigations show full relaxation and high structural perfection of the epitaxial germanium. An abrupt interface showing no evidence for intermixing is formed between germanium and silicon. Similar to SME of germanium on standard Si(001) wafers the lattice mismatch is compensated by a periodic array of full edge dislocations parallel to the interface. XRD measurements indicate that part of the silicon is under a small tensile strain. We attribute this to partial strain accommodation in the top silicon layer of the porous substrate which acts as a compliant substrate.
UR - https://www.scopus.com/pages/publications/84864206463
U2 - 10.1109/ISTDM.2012.6222502
DO - 10.1109/ISTDM.2012.6222502
M3 - Conference contribution
AN - SCOPUS:84864206463
SN - 9781457718625
T3 - 2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Proceedings
SP - 150
EP - 151
BT - 2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Proceedings
T2 - 6th International Silicon-Germanium Technology and Device Meeting, ISTDM 2012
Y2 - 4 June 2012 through 6 June 2012
ER -