Relaxed Si1-xGex/Si1-x-yGexCy buffer structures with low threading dislocation density

H. J. Osten; E. Bugiel

doi:10.1063/1.119067

Relaxed Si_1-xGe_x/Si_1-x-yGe_xC_y buffer structures with low threading dislocation density

H. J. Osten^*
, E. Bugiel

^*Corresponding author for this work

Leibniz Institute for High Performance Microelectronics (IHP)

Research output: Contribution to journal › Article › Research › peer review

Abstract

We demonstrate the growth of a relaxed, only 1 μm thick, stepwise graded buffer based on a combination of Si_1-xGe_x and Si_1-x-yGe_xC_y. This buffer concept relies on the retardation of dislocation glide in Si_1-x-yGe_xC_y relative to strain equivalent Si_1-x-yGe_x. on silicon. The homogeneous Si_1-x-yGe_x layer with x = 30% on top of the buffer structure is (73±5)% relaxed. For the nonoptimized buffer growth, we already find a threading dislocation density below 10⁵ cm^-2. A stepped Si_1-xGe_x buffer with the identical thickness and strain profile grown with the same temperature ramp yields a threading dislocation density above 10⁷ cm^-2. This indicates that the addition of carbon is a promising way for new relaxed buffer concepts with low threading dislocation densities.

Original language	English
Pages (from-to)	2813-2815
Number of pages	3
Journal	Applied physics letters
Volume	70
Issue number	21
DOIs	https://doi.org/10.1063/1.119067
Publication status	Published - 26 May 1997
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.119067

Cite this

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title = "Relaxed Si1-xGex/Si1-x-yGexCy buffer structures with low threading dislocation density",

abstract = "We demonstrate the growth of a relaxed, only 1 μm thick, stepwise graded buffer based on a combination of Si1-xGex and Si1-x-yGexCy. This buffer concept relies on the retardation of dislocation glide in Si1-x-yGexCy relative to strain equivalent Si1-x-yGex. on silicon. The homogeneous Si1-x-yGex layer with x = 30\% on top of the buffer structure is (73±5)\% relaxed. For the nonoptimized buffer growth, we already find a threading dislocation density below 105 cm-2. A stepped Si1-xGex buffer with the identical thickness and strain profile grown with the same temperature ramp yields a threading dislocation density above 107 cm-2. This indicates that the addition of carbon is a promising way for new relaxed buffer concepts with low threading dislocation densities.",

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N2 - We demonstrate the growth of a relaxed, only 1 μm thick, stepwise graded buffer based on a combination of Si1-xGex and Si1-x-yGexCy. This buffer concept relies on the retardation of dislocation glide in Si1-x-yGexCy relative to strain equivalent Si1-x-yGex. on silicon. The homogeneous Si1-x-yGex layer with x = 30% on top of the buffer structure is (73±5)% relaxed. For the nonoptimized buffer growth, we already find a threading dislocation density below 105 cm-2. A stepped Si1-xGex buffer with the identical thickness and strain profile grown with the same temperature ramp yields a threading dislocation density above 107 cm-2. This indicates that the addition of carbon is a promising way for new relaxed buffer concepts with low threading dislocation densities.

AB - We demonstrate the growth of a relaxed, only 1 μm thick, stepwise graded buffer based on a combination of Si1-xGex and Si1-x-yGexCy. This buffer concept relies on the retardation of dislocation glide in Si1-x-yGexCy relative to strain equivalent Si1-x-yGex. on silicon. The homogeneous Si1-x-yGex layer with x = 30% on top of the buffer structure is (73±5)% relaxed. For the nonoptimized buffer growth, we already find a threading dislocation density below 105 cm-2. A stepped Si1-xGex buffer with the identical thickness and strain profile grown with the same temperature ramp yields a threading dislocation density above 107 cm-2. This indicates that the addition of carbon is a promising way for new relaxed buffer concepts with low threading dislocation densities.

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