Shot noise in tunneling through a single quantum dot

A. Nauen; F. Hohls; N. Maire; K. Pierz; R. J. Haug

doi:10.1103/PhysRevB.70.033305

Shot noise in tunneling through a single quantum dot

A. Nauen
, F. Hohls^*
, N. Maire
, K. Pierz
, R. J. Haug

^*Corresponding author for this work

Institute of Solid State Physics

Research output: Contribution to journal › Article › Research › peer review

Abstract

We investigate the noise properties of a zero-dimensional InAs quantum dot (QD) embedded in a GaAs-AlAs-GaAs tunneling structure. We observe an approximately linear dependence of the Fano factor and the current as a function of bias voltage. Both effects can be linked to the scanning of the three-dimensional emitter density of states by the QD. At the current step the shape of the Fano factor is mainly determined by the Fermi function of the emitter electrons. The observed voltage and temperature dependence is compared to the results of a master equation approach.

Original language	English
Article number	033305
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	70
Issue number	3
DOIs	https://doi.org/10.1103/PhysRevB.70.033305 https://doi.org/10.15488/2849
Publication status	Published - 13 Jul 2004

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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title = "Shot noise in tunneling through a single quantum dot",

abstract = "We investigate the noise properties of a zero-dimensional InAs quantum dot (QD) embedded in a GaAs-AlAs-GaAs tunneling structure. We observe an approximately linear dependence of the Fano factor and the current as a function of bias voltage. Both effects can be linked to the scanning of the three-dimensional emitter density of states by the QD. At the current step the shape of the Fano factor is mainly determined by the Fermi function of the emitter electrons. The observed voltage and temperature dependence is compared to the results of a master equation approach.",

author = "A. Nauen and F. Hohls and N. Maire and K. Pierz and Haug, \{R. J.\}",

note = "Funding information: The authors would like to thank Gerold Kiesslich for enlightening discussions. We acknowledge financial support from DFG and BMBF.",

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AU - Nauen, A.

AU - Hohls, F.

AU - Maire, N.

AU - Pierz, K.

AU - Haug, R. J.

N1 - Funding information: The authors would like to thank Gerold Kiesslich for enlightening discussions. We acknowledge financial support from DFG and BMBF.

PY - 2004/7/13

Y1 - 2004/7/13

N2 - We investigate the noise properties of a zero-dimensional InAs quantum dot (QD) embedded in a GaAs-AlAs-GaAs tunneling structure. We observe an approximately linear dependence of the Fano factor and the current as a function of bias voltage. Both effects can be linked to the scanning of the three-dimensional emitter density of states by the QD. At the current step the shape of the Fano factor is mainly determined by the Fermi function of the emitter electrons. The observed voltage and temperature dependence is compared to the results of a master equation approach.

AB - We investigate the noise properties of a zero-dimensional InAs quantum dot (QD) embedded in a GaAs-AlAs-GaAs tunneling structure. We observe an approximately linear dependence of the Fano factor and the current as a function of bias voltage. Both effects can be linked to the scanning of the three-dimensional emitter density of states by the QD. At the current step the shape of the Fano factor is mainly determined by the Fermi function of the emitter electrons. The observed voltage and temperature dependence is compared to the results of a master equation approach.

UR - https://www.scopus.com/pages/publications/37649029400

U2 - 10.1103/PhysRevB.70.033305

DO - 10.1103/PhysRevB.70.033305

M3 - Article

AN - SCOPUS:37649029400

SN - 0163-1829

VL - 70

JO - Physical Review B - Condensed Matter and Materials Physics

JF - Physical Review B - Condensed Matter and Materials Physics

IS - 3

M1 - 033305

ER -

Shot noise in tunneling through a single quantum dot

Abstract

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