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Single-electron transistors with quantum dots

  • R. J. Haug*
  • , M. Dilger
  • , T. Schmidt
  • , R. H. Blick
  • , K. V. Klitzing
  • , K. Eberl
  • *Corresponding author for this work

Research output: Contribution to journalArticleResearchpeer review

Abstract

Single-electron transistors can be fabricated in AlGaAs/GaAs heterostructures in different ways. Besides conventional ways to produce lateral and vertical tunneling structures the overgrowth of patterned substrates is presented as a new method to obtain complete transistors. Single-electron tunneling through single and coupled quantum dots is shown and the possibilities of doing spectroscopy of electronic states are discussed.

Original languageEnglish
Pages (from-to)82-86
Number of pages5
JournalPhysica B: Condensed Matter
Volume227
Issue number1-4
DOIs
Publication statusPublished - Sept 1996
Externally publishedYes

Keywords

  • Quantum dots
  • Single-electron tunneling
  • Spectroscopy

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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