Abstract
Single-electron transistors can be fabricated in AlGaAs/GaAs heterostructures in different ways. Besides conventional ways to produce lateral and vertical tunneling structures the overgrowth of patterned substrates is presented as a new method to obtain complete transistors. Single-electron tunneling through single and coupled quantum dots is shown and the possibilities of doing spectroscopy of electronic states are discussed.
| Original language | English |
|---|---|
| Pages (from-to) | 82-86 |
| Number of pages | 5 |
| Journal | Physica B: Condensed Matter |
| Volume | 227 |
| Issue number | 1-4 |
| DOIs | |
| Publication status | Published - Sept 1996 |
| Externally published | Yes |
Keywords
- Quantum dots
- Single-electron tunneling
- Spectroscopy
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
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