Thermal stability of pt/epitaxial Gd2O3/Si stacks

E. Lipp; M. Eizenberg; M. Czernohorsky; H. J. Osten

Thermal stability of pt/epitaxial Gd₂O₃/Si stacks

E. Lipp^*, M. Eizenberg, M. Czernohorsky, H. J. Osten

^*Corresponding author for this work

Institute of Electronic Materials and Devices

Technion-Israel Institute of Technology

Research output: Chapter in book/report/conference proceeding › Conference contribution › Research › peer review

Abstract

The thermal stability of Pt/ epitaxial Gd2O3/ Si(100) stacks is studied as function of temperature in the range 400-650°C. Following 30min anneal at 600□ C, a significant increase in oxide leakage current is measured. We show that oxide degradation is not accompanied by chemical reactions at the oxide/Si or metal/ oxide interfaces but is rather induced by formation of Gd vacancies, due to Gd out diffusion through the grain boundaries of the Pt layer. Secondary ion mass spectrometry (SMS) measurements show that the stack is stable up to 500□ C, and that significant diffusion of Gd occurs only after 30min at 550□C. A quantitative analysis of the diffusion kinetics between 550□C and 650□C is presented, based on the SMS data. The pre-exponential term and activation energy for grain boundary diffusion of Gd are calculated to be (5±2)-10-10 cm2/sec and (0.67+0.04) eV respectively

Original language	English
Title of host publication	Materials Research Society Symposium Proceedings - Characterization of Oxide/Semiconductor Interfaces for CMOS Technologies
Pages	64-69
Number of pages	6
Publication status	Published - 2007
Event	Characterization of Oxide/Semiconductor Interfaces for CMOS Technologies - 2007 MRS Spring Meeting - San Francisco, CA, United States Duration: 9 Apr 2007 → 13 Apr 2007

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	996
ISSN (Print)	0272-9172

Conference

Conference	Characterization of Oxide/Semiconductor Interfaces for CMOS Technologies - 2007 MRS Spring Meeting
Country/Territory	United States
City	San Francisco, CA
Period	9 Apr 2007 → 13 Apr 2007

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Cite this

@inproceedings{f12445ec4f9b4961bd87cf348e069cee,

title = "Thermal stability of pt/epitaxial Gd2O3/Si stacks",

abstract = "The thermal stability of Pt/ epitaxial Gd2O3/ Si(100) stacks is studied as function of temperature in the range 400-650°C. Following 30min anneal at 600□ C, a significant increase in oxide leakage current is measured. We show that oxide degradation is not accompanied by chemical reactions at the oxide/Si or metal/ oxide interfaces but is rather induced by formation of Gd vacancies, due to Gd out diffusion through the grain boundaries of the Pt layer. Secondary ion mass spectrometry (SMS) measurements show that the stack is stable up to 500□ C, and that significant diffusion of Gd occurs only after 30min at 550□C. A quantitative analysis of the diffusion kinetics between 550□C and 650□C is presented, based on the SMS data. The pre-exponential term and activation energy for grain boundary diffusion of Gd are calculated to be (5±2)-10-10 cm2/sec and (0.67+0.04) eV respectively",

author = "E. Lipp and M. Eizenberg and M. Czernohorsky and Osten, {H. J.}",

year = "2007",

language = "English",

isbn = "9781605604282",

series = "Materials Research Society Symposium Proceedings",

pages = "64--69",

booktitle = "Materials Research Society Symposium Proceedings - Characterization of Oxide/Semiconductor Interfaces for CMOS Technologies",

note = "Characterization of Oxide/Semiconductor Interfaces for CMOS Technologies - 2007 MRS Spring Meeting ; Conference date: 09-04-2007 Through 13-04-2007",

}

Lipp, E, Eizenberg, M, Czernohorsky, M & Osten, HJ 2007, Thermal stability of pt/epitaxial Gd₂O₃/Si stacks. in Materials Research Society Symposium Proceedings - Characterization of Oxide/Semiconductor Interfaces for CMOS Technologies. Materials Research Society Symposium Proceedings, vol. 996, pp. 64-69, Characterization of Oxide/Semiconductor Interfaces for CMOS Technologies - 2007 MRS Spring Meeting, San Francisco, CA, United States, 9 Apr 2007.

Thermal stability of pt/epitaxial Gd₂O₃/Si stacks. / Lipp, E.; Eizenberg, M.; Czernohorsky, M. et al.
Materials Research Society Symposium Proceedings - Characterization of Oxide/Semiconductor Interfaces for CMOS Technologies. 2007. p. 64-69 (Materials Research Society Symposium Proceedings; Vol. 996).

Research output: Chapter in book/report/conference proceeding › Conference contribution › Research › peer review

TY - GEN

T1 - Thermal stability of pt/epitaxial Gd2O3/Si stacks

AU - Lipp, E.

AU - Eizenberg, M.

AU - Czernohorsky, M.

AU - Osten, H. J.

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N2 - The thermal stability of Pt/ epitaxial Gd2O3/ Si(100) stacks is studied as function of temperature in the range 400-650°C. Following 30min anneal at 600□ C, a significant increase in oxide leakage current is measured. We show that oxide degradation is not accompanied by chemical reactions at the oxide/Si or metal/ oxide interfaces but is rather induced by formation of Gd vacancies, due to Gd out diffusion through the grain boundaries of the Pt layer. Secondary ion mass spectrometry (SMS) measurements show that the stack is stable up to 500□ C, and that significant diffusion of Gd occurs only after 30min at 550□C. A quantitative analysis of the diffusion kinetics between 550□C and 650□C is presented, based on the SMS data. The pre-exponential term and activation energy for grain boundary diffusion of Gd are calculated to be (5±2)-10-10 cm2/sec and (0.67+0.04) eV respectively

AB - The thermal stability of Pt/ epitaxial Gd2O3/ Si(100) stacks is studied as function of temperature in the range 400-650°C. Following 30min anneal at 600□ C, a significant increase in oxide leakage current is measured. We show that oxide degradation is not accompanied by chemical reactions at the oxide/Si or metal/ oxide interfaces but is rather induced by formation of Gd vacancies, due to Gd out diffusion through the grain boundaries of the Pt layer. Secondary ion mass spectrometry (SMS) measurements show that the stack is stable up to 500□ C, and that significant diffusion of Gd occurs only after 30min at 550□C. A quantitative analysis of the diffusion kinetics between 550□C and 650□C is presented, based on the SMS data. The pre-exponential term and activation energy for grain boundary diffusion of Gd are calculated to be (5±2)-10-10 cm2/sec and (0.67+0.04) eV respectively

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