Transferring the Record p-type Si POLO-IBC Cell Technology Towards an Industrial Level

Felix Haase; Christina Hollemann; Soren Schafer; Jan Krügener; Rolf Brendel; Robby Peibst

doi:10.1109/pvsc40753.2019.8980960

Transferring the Record p-type Si POLO-IBC Cell Technology Towards an Industrial Level

Felix Haase
, Christina Hollemann
, Soren Schafer
, Jan Krügener
, Rolf Brendel
, Robby Peibst

Institute for Solar Energy Research (ISFH)

Research output: Chapter in book/report/conference proceeding › Conference contribution › Research › peer review

Abstract

We report on the transfer of our lab-type POLO²-IBC process with POLO contacts for both polarities towards an industrial level. Here we demonstrate a shortened cell fabrication process that uses p-type wafers and keeps the Al-back surface field of the PERC process but substitutes the phosphorous diffusion by a n-type poly-Si deposition. The resulting POLO-IBC process is similarly short as the PERC process. A high lifetime with the Cz material and highly selective POLO junctions require a reduce thermal budget and a reduced thickness of the interfacial oxide compared to our previous lab cells that used FZ silicon wafers. Our POLO-IBC cells have an efficiency potential of 24.5 % as deduced from simulations. We measure an efficiency of 21.8 % after finishing the first cell batch. For a cell from our second cell batch with improved passivation we measure an implied pseudo efficiency of 25.2 % before laser contact openings.

Original language	English
Title of host publication	2019 IEEE 46th Photovoltaic Specialists Conference, PVSC 2019
Subtitle of host publication	Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	2200-2206
Number of pages	7
ISBN (Electronic)	978-1-7281-0494-2
ISBN (Print)	978-1-7281-0495-9
DOIs	https://doi.org/10.1109/pvsc40753.2019.8980960
Publication status	Published - Jun 2019
Event	46th IEEE Photovoltaic Specialists Conference, PVSC 2019 - Chicago, United States Duration: 16 Jun 2019 → 21 Jun 2019

Publication series

Name	Conference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)	0160-8371

Conference

Conference	46th IEEE Photovoltaic Specialists Conference, PVSC 2019
Country/Territory	United States
City	Chicago
Period	16 Jun 2019 → 21 Jun 2019

UN Sustainable Development Goals (SDGs)

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Keywords

loss analysis
photovoltaic cells
POLO passivating contacts
screen printing

ASJC Scopus subject areas

Control and Systems Engineering
Industrial and Manufacturing Engineering
Electrical and Electronic Engineering

Access to Document

10.1109/pvsc40753.2019.8980960

Cite this

Haase, F., Hollemann, C., Schafer, S., Krügener, J., Brendel, R., & Peibst, R. (2019). Transferring the Record p-type Si POLO-IBC Cell Technology Towards an Industrial Level. In 2019 IEEE 46th Photovoltaic Specialists Conference, PVSC 2019: Proceedings (pp. 2200-2206). Article 8980960 (Conference Record of the IEEE Photovoltaic Specialists Conference). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/pvsc40753.2019.8980960

Haase, Felix ; Hollemann, Christina ; Schafer, Soren et al. / Transferring the Record p-type Si POLO-IBC Cell Technology Towards an Industrial Level. 2019 IEEE 46th Photovoltaic Specialists Conference, PVSC 2019: Proceedings. Institute of Electrical and Electronics Engineers Inc., 2019. pp. 2200-2206 (Conference Record of the IEEE Photovoltaic Specialists Conference).

@inproceedings{4b285166763043a38e04a81071d61700,

title = "Transferring the Record p-type Si POLO-IBC Cell Technology Towards an Industrial Level",

abstract = "We report on the transfer of our lab-type POLO2-IBC process with POLO contacts for both polarities towards an industrial level. Here we demonstrate a shortened cell fabrication process that uses p-type wafers and keeps the Al-back surface field of the PERC process but substitutes the phosphorous diffusion by a n-type poly-Si deposition. The resulting POLO-IBC process is similarly short as the PERC process. A high lifetime with the Cz material and highly selective POLO junctions require a reduce thermal budget and a reduced thickness of the interfacial oxide compared to our previous lab cells that used FZ silicon wafers. Our POLO-IBC cells have an efficiency potential of 24.5 \% as deduced from simulations. We measure an efficiency of 21.8 \% after finishing the first cell batch. For a cell from our second cell batch with improved passivation we measure an implied pseudo efficiency of 25.2 \% before laser contact openings.",

keywords = "loss analysis, photovoltaic cells, POLO passivating contacts, screen printing",

author = "Felix Haase and Christina Hollemann and Soren Schafer and Jan Kr{\"u}gener and Rolf Brendel and Robby Peibst",

note = "Funding information: The authors thank the Federal Ministry of Economic Affairs and Energy (BMWi) under grant number 0324275A (Street) and the State of Lower Saxony for funding this work, Anja Christ, Miriam Berger, Hilke Fischer, Annika Raugewitz, Ulrike Baumann, Till Brendem{\"u}hl, Sonja Br{\"a}unig and Birgit Beier (all from ISFH), Raymond Zieseniss and Guido Glowatzki (both from Institute of Electronic Materials and Devices) for sample processing, Bettina Wolpensinger (ISFH) for the SEM analysis and Tobias Neubert and David Sylla (both ISFH) for laser processing and drawing the layout for screen printing.; 46th IEEE Photovoltaic Specialists Conference, PVSC 2019 ; Conference date: 16-06-2019 Through 21-06-2019",

year = "2019",

month = jun,

doi = "10.1109/pvsc40753.2019.8980960",

language = "English",

isbn = "978-1-7281-0495-9",

series = "Conference Record of the IEEE Photovoltaic Specialists Conference",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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booktitle = "2019 IEEE 46th Photovoltaic Specialists Conference, PVSC 2019",

address = "United States",

}

Haase, F, Hollemann, C, Schafer, S, Krügener, J , Brendel, R & Peibst, R 2019, Transferring the Record p-type Si POLO-IBC Cell Technology Towards an Industrial Level. in 2019 IEEE 46th Photovoltaic Specialists Conference, PVSC 2019: Proceedings., 8980960, Conference Record of the IEEE Photovoltaic Specialists Conference, Institute of Electrical and Electronics Engineers Inc., pp. 2200-2206, 46th IEEE Photovoltaic Specialists Conference, PVSC 2019, Chicago, United States, 16 Jun 2019. https://doi.org/10.1109/pvsc40753.2019.8980960

Transferring the Record p-type Si POLO-IBC Cell Technology Towards an Industrial Level. / Haase, Felix; Hollemann, Christina; Schafer, Soren et al.
2019 IEEE 46th Photovoltaic Specialists Conference, PVSC 2019: Proceedings. Institute of Electrical and Electronics Engineers Inc., 2019. p. 2200-2206 8980960 (Conference Record of the IEEE Photovoltaic Specialists Conference).

Research output: Chapter in book/report/conference proceeding › Conference contribution › Research › peer review

TY - GEN

T1 - Transferring the Record p-type Si POLO-IBC Cell Technology Towards an Industrial Level

AU - Haase, Felix

AU - Hollemann, Christina

AU - Schafer, Soren

AU - Krügener, Jan

AU - Brendel, Rolf

AU - Peibst, Robby

N1 - Funding information: The authors thank the Federal Ministry of Economic Affairs and Energy (BMWi) under grant number 0324275A (Street) and the State of Lower Saxony for funding this work, Anja Christ, Miriam Berger, Hilke Fischer, Annika Raugewitz, Ulrike Baumann, Till Brendemühl, Sonja Bräunig and Birgit Beier (all from ISFH), Raymond Zieseniss and Guido Glowatzki (both from Institute of Electronic Materials and Devices) for sample processing, Bettina Wolpensinger (ISFH) for the SEM analysis and Tobias Neubert and David Sylla (both ISFH) for laser processing and drawing the layout for screen printing.

PY - 2019/6

Y1 - 2019/6

N2 - We report on the transfer of our lab-type POLO2-IBC process with POLO contacts for both polarities towards an industrial level. Here we demonstrate a shortened cell fabrication process that uses p-type wafers and keeps the Al-back surface field of the PERC process but substitutes the phosphorous diffusion by a n-type poly-Si deposition. The resulting POLO-IBC process is similarly short as the PERC process. A high lifetime with the Cz material and highly selective POLO junctions require a reduce thermal budget and a reduced thickness of the interfacial oxide compared to our previous lab cells that used FZ silicon wafers. Our POLO-IBC cells have an efficiency potential of 24.5 % as deduced from simulations. We measure an efficiency of 21.8 % after finishing the first cell batch. For a cell from our second cell batch with improved passivation we measure an implied pseudo efficiency of 25.2 % before laser contact openings.

AB - We report on the transfer of our lab-type POLO2-IBC process with POLO contacts for both polarities towards an industrial level. Here we demonstrate a shortened cell fabrication process that uses p-type wafers and keeps the Al-back surface field of the PERC process but substitutes the phosphorous diffusion by a n-type poly-Si deposition. The resulting POLO-IBC process is similarly short as the PERC process. A high lifetime with the Cz material and highly selective POLO junctions require a reduce thermal budget and a reduced thickness of the interfacial oxide compared to our previous lab cells that used FZ silicon wafers. Our POLO-IBC cells have an efficiency potential of 24.5 % as deduced from simulations. We measure an efficiency of 21.8 % after finishing the first cell batch. For a cell from our second cell batch with improved passivation we measure an implied pseudo efficiency of 25.2 % before laser contact openings.

KW - loss analysis

KW - photovoltaic cells

KW - POLO passivating contacts

KW - screen printing

UR - https://www.scopus.com/pages/publications/85081550270

U2 - 10.1109/pvsc40753.2019.8980960

DO - 10.1109/pvsc40753.2019.8980960

M3 - Conference contribution

AN - SCOPUS:85081550270

SN - 978-1-7281-0495-9

T3 - Conference Record of the IEEE Photovoltaic Specialists Conference

SP - 2200

EP - 2206

BT - 2019 IEEE 46th Photovoltaic Specialists Conference, PVSC 2019

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 46th IEEE Photovoltaic Specialists Conference, PVSC 2019

Y2 - 16 June 2019 through 21 June 2019

ER -

Haase F, Hollemann C, Schafer S, Krügener J , Brendel R, Peibst R. Transferring the Record p-type Si POLO-IBC Cell Technology Towards an Industrial Level. In 2019 IEEE 46th Photovoltaic Specialists Conference, PVSC 2019: Proceedings. Institute of Electrical and Electronics Engineers Inc. 2019. p. 2200-2206. 8980960. (Conference Record of the IEEE Photovoltaic Specialists Conference). doi: 10.1109/pvsc40753.2019.8980960

Transferring the Record p-type Si POLO-IBC Cell Technology Towards an Industrial Level

Abstract

Publication series

Conference

UN Sustainable Development Goals (SDGs)

Keywords

ASJC Scopus subject areas

Access to Document

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Cite this